The Role of Si Self-interstitial Atoms in the Formation of Electrically Active Defects in Reverse Biased Silicon n+-p Diodes upon Irradiation with Alpha Particles

Dzmitriy A. Aharodnikau, Stanislau B. Lastovskii, Sergei V. Shpakovski, Vladimir Markevich, Matthew Halsall, Tony Peaker

Research output: Contribution to journalArticlepeer-review

Abstract

Results of a study of changes in electrical characteristics of n+-p diodes on boron-doped episilicon induced by irradiation with alpha particles under applied reverse bias voltages are presented. It is found that the irradiation results in a significantly lower introduction rate of carrier compensating radiation-induced defects (RIDs) in the space charge region of the reverse biased structures as compared with those in the neutral base region and in similar diodes irradiated without bias. We characterize the dominant hole and electron emission signals in the capacitance transient spectra of the irradiated diodes and identify them with energy levels of some known RIDs in moderately doped p-type Si:B. Changes in concentration of the defects are monitored after post-irradiation minority carrier injection and thermal treatments. It is argued that the observed effect of the reduced concentration of RIDs in the space charge regions of the diodes is related mainly to some specific features of the silicon self-interstitials (ISi): a very strong dependence of their thermal stability on charge state and a highly enhanced mobility in p-type Si under minority carrier injection conditions. The activation energy of electron emission from the doubly positively charged state of ISi is
determined.
Original languageEnglish
JournalPhysica Status Solidi. A: Applications and Materials Science
DOIs
Publication statusAccepted/In press - 29 Mar 2021

Keywords

  • alpha particles
  • annealing
  • deep level transient spectroscopy
  • defects
  • irradiation
  • n–p diodes
  • silicon

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