Abstract
ABSTRACT: Thin films of CZTSSe with band gaps ranging from 1.0 to 1.6 eV have been deposited using a
molecular-precursor approach in Aerosol Assisted Chemical Vapor Deposition (AACVD). The [S]:[Se] ratio
has been varied and plays a key role in controlling the structure, morphology, electrical and optical properties
of the deposited films. A Vegard-type analysis on the collected results showed a direct correlation between the
concentration of selenium in the precursor mixture and key performance parameters of the deposited films.
molecular-precursor approach in Aerosol Assisted Chemical Vapor Deposition (AACVD). The [S]:[Se] ratio
has been varied and plays a key role in controlling the structure, morphology, electrical and optical properties
of the deposited films. A Vegard-type analysis on the collected results showed a direct correlation between the
concentration of selenium in the precursor mixture and key performance parameters of the deposited films.
| Original language | English |
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| Publication status | Published - 29 Mar 2015 |