The Tersoff potential for phonons in GaAs

Dave Powell; Max A. Migliorato; Anthony G. Cullis

doi:10.1016/j.physe.2005.12.051

The Tersoff potential for phonons in GaAs

Dave Powell, Max A. Migliorato, Anthony G. Cullis

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the use of the Tersoff empirical potential applied to GaAs. Cohesive and elastic properties, as well as phonon frequencies and Grüneisen parameters at the Γ and X points, are calculated and compared to experimental data. The limitations of the potential and its existing parametrisations are discussed. © 2006 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	270-272
Number of pages	2
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	32
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2005.12.051
Publication status	Published - May 2006

Keywords

GaAs
Phonons
Tersoff potential

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10.1016/j.physe.2005.12.051

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abstract = "We report on the use of the Tersoff empirical potential applied to GaAs. Cohesive and elastic properties, as well as phonon frequencies and Gr{\"u}neisen parameters at the Γ and X points, are calculated and compared to experimental data. The limitations of the potential and its existing parametrisations are discussed. {\textcopyright} 2006 Elsevier B.V. All rights reserved.",

keywords = "GaAs, Phonons, Tersoff potential",

author = "Dave Powell and Migliorato, {Max A.} and Cullis, {Anthony G.}",

note = "Times Cited: 0 12th International Conference on Modulated Semiconductor Structures (MSS12) JUL 10-15, 2005 Albuquerque, NM",

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AU - Powell, Dave

AU - Migliorato, Max A.

AU - Cullis, Anthony G.

N1 - Times Cited: 0 12th International Conference on Modulated Semiconductor Structures (MSS12) JUL 10-15, 2005 Albuquerque, NM

PY - 2006/5

Y1 - 2006/5

N2 - We report on the use of the Tersoff empirical potential applied to GaAs. Cohesive and elastic properties, as well as phonon frequencies and Grüneisen parameters at the Γ and X points, are calculated and compared to experimental data. The limitations of the potential and its existing parametrisations are discussed. © 2006 Elsevier B.V. All rights reserved.

AB - We report on the use of the Tersoff empirical potential applied to GaAs. Cohesive and elastic properties, as well as phonon frequencies and Grüneisen parameters at the Γ and X points, are calculated and compared to experimental data. The limitations of the potential and its existing parametrisations are discussed. © 2006 Elsevier B.V. All rights reserved.

KW - GaAs

KW - Phonons

KW - Tersoff potential

U2 - 10.1016/j.physe.2005.12.051

DO - 10.1016/j.physe.2005.12.051

M3 - Article

VL - 32

SP - 270

EP - 272

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

ER -

The Tersoff potential for phonons in GaAs

Abstract

Keywords

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