@book{58aaf703448546fbbe8414c7ecb0d3e7,
title = "The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs",
abstract = "In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We rind that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.",
author = "V Haxha and R Garg and Migliorato, {M A} and Drouzas, {I W} and Ulloa, {J M} and Koenraad, {P M} and Steer, {M J} and Liu, {H Y} and M Hopkinson and Mowbray, {D J}",
note = "Times Cited: 0 8th International Conference on Numerical Simulation of Optoelectronic Devices SEP 01-04, 2008 Univ Nottingham, Nottingham, ENGLAND IEEE Lasers & Electro Opt Soc",
year = "2008",
language = "English",
isbn = "978-1-4244-2307-1",
series = "Nusod '08: Proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices",
publisher = "IEEE",
address = "United States",
}