The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

V Haxha, R Garg, M A Migliorato, I W Drouzas, J M Ulloa, P M Koenraad, M J Steer, H Y Liu, M Hopkinson, D J Mowbray

    Research output: Book/ReportBookpeer-review


    In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We rind that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.
    Original languageEnglish
    Number of pages2
    ISBN (Print)978-1-4244-2307-1
    Publication statusPublished - 2008

    Publication series

    NameNusod '08: Proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices


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