The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

V. Haxha; R. Garg; M. A. Migliorato; I. W. Drouzas; J. M. Ulloa; P. M. Koenraad; M. J. Steer; H. Y. Liu; M. Hopkinson; D. J. Mowbray

doi:10.1109/NUSOD.2008.4668267

The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

V. Haxha, R. Garg, M. A. Migliorato, I. W. Drouzas, J. M. Ulloa, P. M. Koenraad, M. J. Steer, H. Y. Liu, M. Hopkinson, D. J. Mowbray

Division of Informatics, Imaging & Data Sciences (L5)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

Original language	English
Title of host publication	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
Pages	111-112
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2008.4668267
Publication status	Published - 22 Dec 2008
Event	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 - Nottingham, United Kingdom Duration: 1 Sept 2008 → 4 Sept 2008

Conference

Conference	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
Country/Territory	United Kingdom
City	Nottingham
Period	1/09/08 → 4/09/08

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10.1109/NUSOD.2008.4668267

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Haxha, V., Garg, R., Migliorato, M. A., Drouzas, I. W., Ulloa, J. M., Koenraad, P. M., Steer, M. J., Liu, H. Y., Hopkinson, M., & Mowbray, D. J. (2008). The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. In 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 (pp. 111-112). Article 4668267 https://doi.org/10.1109/NUSOD.2008.4668267

@inproceedings{52bdc2ac11714a16bf48fb470db481f7,

title = "The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs",

abstract = "In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.",

author = "V. Haxha and R. Garg and Migliorato, {M. A.} and Drouzas, {I. W.} and Ulloa, {J. M.} and Koenraad, {P. M.} and Steer, {M. J.} and Liu, {H. Y.} and M. Hopkinson and Mowbray, {D. J.}",

year = "2008",

month = dec,

day = "22",

doi = "10.1109/NUSOD.2008.4668267",

language = "English",

isbn = "9781424423071",

pages = "111--112",

booktitle = "2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08",

note = "2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 ; Conference date: 01-09-2008 Through 04-09-2008",

}

Haxha, V, Garg, R, Migliorato, MA, Drouzas, IW, Ulloa, JM, Koenraad, PM, Steer, MJ, Liu, HY, Hopkinson, M & Mowbray, DJ 2008, The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. in 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08., 4668267, pp. 111-112, 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, Nottingham, United Kingdom, 1/09/08. https://doi.org/10.1109/NUSOD.2008.4668267

TY - GEN

T1 - The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

AU - Haxha, V.

AU - Garg, R.

AU - Migliorato, M. A.

AU - Drouzas, I. W.

AU - Ulloa, J. M.

AU - Koenraad, P. M.

AU - Steer, M. J.

AU - Liu, H. Y.

AU - Hopkinson, M.

AU - Mowbray, D. J.

PY - 2008/12/22

Y1 - 2008/12/22

N2 - In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

AB - In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

UR - http://www.scopus.com/inward/record.url?scp=57649223833&partnerID=8YFLogxK

U2 - 10.1109/NUSOD.2008.4668267

DO - 10.1109/NUSOD.2008.4668267

M3 - Conference contribution

AN - SCOPUS:57649223833

SN - 9781424423071

SP - 111

EP - 112

BT - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08

T2 - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08

Y2 - 1 September 2008 through 4 September 2008

ER -

The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs

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