The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

V. Haxha, R. Garg, M. A. Migliorato, I. W. Drouzas, J. M. Ulloa, P. M. Koenraad, M. J. Steer, H. Y. Liu, M. Hopkinson, D. J. Mowbray

    Research output: Contribution to journalArticlepeer-review


    In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during epitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy. © 2009 Springer Science+Business Media, LLC.
    Original languageEnglish
    Pages (from-to)1143-1148
    Number of pages5
    JournalOptical and Quantum Electronics
    Issue number14-15
    Publication statusPublished - Nov 2008


    • Segregation
    • Semiconductor nanostructures
    • Strain


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