Abstract
In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic model of segregation for the combined effects of group III and V exchange processes during epitaxial growth and compare with experimental data from Scanning Tunnelling Microscopy. © 2009 Springer Science+Business Media, LLC.
Original language | English |
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Pages (from-to) | 1143-1148 |
Number of pages | 5 |
Journal | Optical and Quantum Electronics |
Volume | 40 |
Issue number | 14-15 |
DOIs | |
Publication status | Published - Nov 2008 |
Keywords
- Segregation
- Semiconductor nanostructures
- Strain