The use of Ga2Se3 and Ga2S3 as donor doping sources for MBE-grown AlxGa1-xSb and Al xGa1-xAs

L. Dobaczewskii; K. E. Singer; M. Missous; W. S. Truscott; Z. R. Zytkiewicz

doi:10.1088/0268-1242/10/4/022

The use of Ga₂Se₃ and Ga₂S₃ as donor doping sources for MBE-grown Al_xGa_1-xSb and Al _xGa_1-xAs

L. Dobaczewskii^*, K. E. Singer, M. Missous, W. S. Truscott, Z. R. Zytkiewicz

^*Corresponding author for this work

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Abstract

The first results obtained with a use of Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AI,Ga1-xSb (0<or=x<or=1) on GaSb and GaAs substrates and AlxGa1-xAs (0<or=x<or=0.4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be easily controlled up to a maximum of 5*1018 cm-3. For AlxGa1-xSb it was possible to compensate the high concentration of native acceptors and obtain n-type conductivity over the full composition range of the alloy. For GaSb maximum free electron concentrations were 6*1017 cm-3 and 5*1016 cm-3 for selenium and sulphur elements respectively.

Original language	English
Article number	022
Pages (from-to)	509-514
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	10
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/10/4/022
Publication status	Published - 1 Apr 1995

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title = "The use of Ga2Se3 and Ga2S3 as donor doping sources for MBE-grown AlxGa1-xSb and Al xGa1-xAs",

abstract = "The first results obtained with a use of Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AI,Ga1-xSb (0<or=x<or=1) on GaSb and GaAs substrates and AlxGa1-xAs (0<or=x<or=0.4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be easily controlled up to a maximum of 5*1018 cm-3. For AlxGa1-xSb it was possible to compensate the high concentration of native acceptors and obtain n-type conductivity over the full composition range of the alloy. For GaSb maximum free electron concentrations were 6*1017 cm-3 and 5*1016 cm-3 for selenium and sulphur elements respectively.",

author = "L. Dobaczewskii and Singer, {K. E.} and M. Missous and Truscott, {W. S.} and Zytkiewicz, {Z. R.}",

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doi = "10.1088/0268-1242/10/4/022",

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T1 - The use of Ga2Se3 and Ga2S3 as donor doping sources for MBE-grown AlxGa1-xSb and Al xGa1-xAs

AU - Dobaczewskii, L.

AU - Singer, K. E.

AU - Missous, M.

AU - Truscott, W. S.

AU - Zytkiewicz, Z. R.

PY - 1995/4/1

Y1 - 1995/4/1

N2 - The first results obtained with a use of Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AI,Ga1-xSb (0<or=x<or=1) on GaSb and GaAs substrates and AlxGa1-xAs (0<or=x<or=0.4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be easily controlled up to a maximum of 5*1018 cm-3. For AlxGa1-xSb it was possible to compensate the high concentration of native acceptors and obtain n-type conductivity over the full composition range of the alloy. For GaSb maximum free electron concentrations were 6*1017 cm-3 and 5*1016 cm-3 for selenium and sulphur elements respectively.

AB - The first results obtained with a use of Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AI,Ga1-xSb (0<or=x<or=1) on GaSb and GaAs substrates and AlxGa1-xAs (0<or=x<or=0.4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be easily controlled up to a maximum of 5*1018 cm-3. For AlxGa1-xSb it was possible to compensate the high concentration of native acceptors and obtain n-type conductivity over the full composition range of the alloy. For GaSb maximum free electron concentrations were 6*1017 cm-3 and 5*1016 cm-3 for selenium and sulphur elements respectively.

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U2 - 10.1088/0268-1242/10/4/022

DO - 10.1088/0268-1242/10/4/022

M3 - Article

AN - SCOPUS:0029292160

SN - 0268-1242

VL - 10

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EP - 514

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 022

ER -

The use of Ga₂Se₃ and Ga₂S₃ as donor doping sources for MBE-grown Al_xGa_1-xSb and Al _xGa_1-xAs

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