Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs

U. Bangert*, B. Tang, M. Missous

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Å.

Original languageEnglish
Pages (from-to)223-230
Number of pages8
JournalJournal of Crystal Growth
Volume154
Issue number3-4
DOIs
Publication statusPublished - 2 Sept 1995

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