Abstract
The morphology and re-crystallisation behaviour of thick molecular beam epitaxial as-grown and thermally annealed Al films on (100) GaAs is reported. The re-crystallisation of (110) Al phases to (100) Al proceeds vertically and substrate driven with simultanuous formation of sphalerite phases in the (100) Al, giving the overall appearance of an interdiffused layer of 60-100 Å.
Original language | English |
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Pages (from-to) | 223-230 |
Number of pages | 8 |
Journal | Journal of Crystal Growth |
Volume | 154 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 2 Sept 1995 |