Thermal Characterisation of AlGaN/GaN HEMT on Silicon Carbide Substrate for High Frequency Application

Mohammad A Alim, Ali A Rezazadeh, Mayahsa M Ali, Emerson P Sinulingga, Peter B Kyabaggu, Yongjian Zhang, Christopher Gaquiere

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Temperature effect modelling and analysis have been carried out on 0.15 µm and 0.25 µm gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from - 40 to 1500C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters (ECPs) including ft and fmax were analyzed. The results provide some valuable insights for future design optimizations of advanced GaN based MMICs.
    Original languageEnglish
    Title of host publicationEuropean Microwave Integrated Circuits
    Place of PublicationUSA
    PublisherIEEE
    Pages210-213
    Number of pages4
    DOIs
    Publication statusPublished - Oct 2014
    EventEuropean Microwave Integrated Circuits Conference - Rome, Italy
    Duration: 6 Oct 20148 Oct 2014

    Conference

    ConferenceEuropean Microwave Integrated Circuits Conference
    CityRome, Italy
    Period6/10/148/10/14

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