Thermal Characterisation of AlGaN/GaN HEMT on Silicon Carbide Substrate for High Frequency Application

Mohammad A Alim; Ali A Rezazadeh; Christopher Gaquiere

Thermal Characterisation of AlGaN/GaN HEMT on Silicon Carbide Substrate for High Frequency Application

Mohammad A Alim, Ali A Rezazadeh, Christopher Gaquiere

The University of Manchester

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Temperature effect modelling and analysis havebeen carried out on 0.25 µm gate length AlGaN/GaN HEMTgrown on SiC substrate over the temperature range from - 40 to1500C by on-wafer S-parameter measurements up to 50 GHz.The temperature behaviour of the DC and equivalent circuitparameters including ft and fmax were analyzed. The resultsprovide some valuable insights for future design optimizations ofadvanced GaN based MMICs.

Original language	English
Title of host publication	host publication
Place of Publication	USA
Publisher	IEEE
Publication status	Published - Oct 2014
Event	9th European Microwave Integrated Circuits Conference - Rome, Italy Duration: 6 Oct 2014 → 7 Oct 2014

Conference

Conference	9th European Microwave Integrated Circuits Conference
City	Rome, Italy
Period	6/10/14 → 7/10/14

Keywords

AlGaN/GaN/SiC HEMT, on-wafer measurement, equivalent circuit parameter, temperature coefficient.

Cite this

@inproceedings{29b961e8bf4540479b6ab9560d1eb3dd,

title = "Thermal Characterisation of AlGaN/GaN HEMT on Silicon Carbide Substrate for High Frequency Application",

abstract = "Temperature effect modelling and analysis havebeen carried out on 0.25 µm gate length AlGaN/GaN HEMTgrown on SiC substrate over the temperature range from - 40 to1500C by on-wafer S-parameter measurements up to 50 GHz.The temperature behaviour of the DC and equivalent circuitparameters including ft and fmax were analyzed. The resultsprovide some valuable insights for future design optimizations ofadvanced GaN based MMICs.",

keywords = "AlGaN/GaN/SiC HEMT, on-wafer measurement, equivalent circuit parameter, temperature coefficient.",

author = "Alim, \{Mohammad A\} and Rezazadeh, \{Ali A\} and Christopher Gaquiere",

year = "2014",

month = oct,

language = "English",

booktitle = "host publication",

publisher = "IEEE",

address = "United States",

note = "9th European Microwave Integrated Circuits Conference ; Conference date: 06-10-2014 Through 07-10-2014",

}

TY - GEN

T1 - Thermal Characterisation of AlGaN/GaN HEMT on Silicon Carbide Substrate for High Frequency Application

AU - Alim, Mohammad A

AU - Rezazadeh, Ali A

AU - Gaquiere, Christopher

PY - 2014/10

Y1 - 2014/10

N2 - Temperature effect modelling and analysis havebeen carried out on 0.25 µm gate length AlGaN/GaN HEMTgrown on SiC substrate over the temperature range from - 40 to1500C by on-wafer S-parameter measurements up to 50 GHz.The temperature behaviour of the DC and equivalent circuitparameters including ft and fmax were analyzed. The resultsprovide some valuable insights for future design optimizations ofadvanced GaN based MMICs.

AB - Temperature effect modelling and analysis havebeen carried out on 0.25 µm gate length AlGaN/GaN HEMTgrown on SiC substrate over the temperature range from - 40 to1500C by on-wafer S-parameter measurements up to 50 GHz.The temperature behaviour of the DC and equivalent circuitparameters including ft and fmax were analyzed. The resultsprovide some valuable insights for future design optimizations ofadvanced GaN based MMICs.

KW - AlGaN/GaN/SiC HEMT, on-wafer measurement, equivalent circuit parameter, temperature coefficient.

UR - https://www.scopus.com/pages/publications/84921300409

M3 - Conference contribution

BT - host publication

PB - IEEE

CY - USA

T2 - 9th European Microwave Integrated Circuits Conference

Y2 - 6 October 2014 through 7 October 2014

ER -

Thermal Characterisation of AlGaN/GaN HEMT on Silicon Carbide Substrate for High Frequency Application

Abstract

Conference

Keywords

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