TY - JOUR
T1 - Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC
AU - Alim, Mohammad Abdul
AU - Rezazadeh, Ali
PY - 2017/2/14
Y1 - 2017/2/14
N2 - Temperature influence on the device behavior has been carried out on AlGaAs/InGaAs/GaAs-based pseudomorphic high-electron mobility transistor fabricated in multilayer 3-D monolithic microwave integrated circuits technology over multibias operation condition. The multibias thermal effect on the dc and RF, small-signal (up to 40 GHz) and large-signal parameters, including the third-order intercept points as well as the linear and third-order intermodulation output power performance at 4 GHz were analyzed and reported for the first time. In addition, the noise figure parameters of device have been reported and estimated at 10 GHz. The temperature coefficients of the device dc and RF parameters are carefully established at the peak transconductance condition. The results are important for the design optimizations of advanced monolithic multilayer integrations.
AB - Temperature influence on the device behavior has been carried out on AlGaAs/InGaAs/GaAs-based pseudomorphic high-electron mobility transistor fabricated in multilayer 3-D monolithic microwave integrated circuits technology over multibias operation condition. The multibias thermal effect on the dc and RF, small-signal (up to 40 GHz) and large-signal parameters, including the third-order intercept points as well as the linear and third-order intermodulation output power performance at 4 GHz were analyzed and reported for the first time. In addition, the noise figure parameters of device have been reported and estimated at 10 GHz. The temperature coefficients of the device dc and RF parameters are carefully established at the peak transconductance condition. The results are important for the design optimizations of advanced monolithic multilayer integrations.
UR - http://ieeexplore.ieee.org/document/7855754/
U2 - 10.1109/TED.2017.2658685
DO - 10.1109/TED.2017.2658685
M3 - Article
SN - 0018-9383
VL - 64
SP - 1511
EP - 1518
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
ER -