Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC

Engineering

• Monolithic Microwave Integrated Circuits 100%
• Gallium Arsenide 100%
• Thermal Influence 100%
• Indium Gallium Arsenide 50%
• Output Power 50%
• Thermal Effect 50%
• Noise Figure 50%
• Aluminium Gallium Arsenide 50%
• Temperature Coefficient 50%
• Order Intercept Point 50%
• Device Behavior 50%
• Design Optimization 50%
• Intermodulation 50%

Material Science

• Gallium Arsenide 100%
• Indium Gallium Arsenide 50%
• Aluminium Gallium Arsenide 50%
• Electronic Circuit 50%
• Transistor 50%
• Electron Mobility 50%