Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

Jack Mullins, Vladimir P. Markevich, Michelle Vaqueiro-contreras, Nicholas E. Grant, Leif Jensen, Jarosław Jabłoński, John D. Murphy, Matthew P. Halsall, Anthony R. Peaker

The University of Warwick
The University of Warwick
Topsil Semiconductors
Topsil GlobalWafers A/S

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Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states
Murphy, J. D. (Contributor), Mullins, J. (Creator), Halsall, M. P. (Contributor), Vaqueiro-Contreras, M. (Contributor), Jensen, L. (Contributor), Jabłoński, J. (Contributor), Markevich, V. P. (Contributor), Grant, N. E. (Contributor) & Peaker, A. R. (Contributor), Mendeley Data, 17 Jul 2018
DOI: 10.17632/jgwhkcj6c5.1, https://data.mendeley.com/datasets/jgwhkcj6c5
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Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

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Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states