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Abstract
Oxide semiconductors have emerged as ideal candidate materials for flexible electronics and circuits. However, complementary flip-flops, which are the essential building blocks in sequential circuits, based on all-oxide thin-film transistors (TFTs) have not yet been demonstrated. Here, we employed n-type indium gallium zinc oxide and p-type tin monoxide to achieve J-K flip-flop (JK-FF) and D-type edge-triggered FF (D-FF). The operation properties of the JK-FF and D-FF were characterised both statically and dynamically. The output signals of the D-FF show great robustness. The D-FF shows very short propagation delay times of 17 and 40 μs from “0” to “1” and from “1” to “0”, respectively. Based on the D-FFs, a two-bit counter with 90 transistors was designed and fabricated successfully, acting as either up-counter or down-counter. To the best of our knowledge, this counter has the highest integration among the reported thin-film complementary sequential circuits based on all-oxide transistors to date.
Original language | English |
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Pages (from-to) | 62-65 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 42 |
Issue number | 1 |
Early online date | 16 Nov 2020 |
DOIs | |
Publication status | Published - 1 Jan 2021 |
Keywords
- Indium gallium zinc oxide (IGZO)
- sequential circuit
- tin monoxide (SnO)
- D-type edge-triggered flip-flop (D-FF)
- J-K flip-flop (JK-FF)
- thin-film transistors (TFT)
- complementary
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- 1 Finished
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Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
Project: Research