Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting

M. Sakano; J. Miyawaki; A. Chainani; Y. Takata; T. Sonobe; T. Shimojima; M. Oura; S. Shin; M. S. Bahramy; R. Arita; N. Nagaosa; H. Murakawa; Y. Kaneko; Y. Tokura; K. Ishizaka

doi:10.1103/PhysRevB.86.085204

Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting

M. Sakano, J. Miyawaki, A. Chainani, Y. Takata, T. Sonobe, T. Shimojima, M. Oura, S. Shin, M. S. Bahramy, R. Arita, N. Nagaosa, H. Murakawa, Y. Kaneko, Y. Tokura, K. Ishizaka

Theoretical Physics Group

Research output: Contribution to journal › Article › peer-review

Abstract

In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the three-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive
hν-dependent soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well reproducible by the first-principles calculations, with huge spin splittings of ∼300 meV at the conduction-band minimum and valence-band maximum located in the kz=π/c plane. It provides direct experimental evidence of the 3D Rashba-type spin splitting in a bulk compound.

Original language	English
Article number	085204
Journal	Physical Review B
Volume	86
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.86.085204
Publication status	Published - 16 Aug 2012

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Sakano, M., Miyawaki, J., Chainani, A., Takata, Y., Sonobe, T., Shimojima, T., Oura, M., Shin, S., Bahramy, M. S., Arita, R., Nagaosa, N., Murakawa, H., Kaneko, Y., Tokura, Y., & Ishizaka, K. (2012). Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting. Physical Review B, 86(8), Article 085204. https://doi.org/10.1103/PhysRevB.86.085204

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title = "Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting",

abstract = "In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the three-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive hν-dependent soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well reproducible by the first-principles calculations, with huge spin splittings of ∼300 meV at the conduction-band minimum and valence-band maximum located in the kz=π/c plane. It provides direct experimental evidence of the 3D Rashba-type spin splitting in a bulk compound.",

author = "M. Sakano and J. Miyawaki and A. Chainani and Y. Takata and T. Sonobe and T. Shimojima and M. Oura and S. Shin and Bahramy, \{M. S.\} and R. Arita and N. Nagaosa and H. Murakawa and Y. Kaneko and Y. Tokura and K. Ishizaka",

year = "2012",

month = aug,

day = "16",

doi = "10.1103/PhysRevB.86.085204",

language = "English",

volume = "86",

journal = "Physical Review B",

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T1 - Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting

AU - Sakano, M.

AU - Miyawaki, J.

AU - Chainani, A.

AU - Takata, Y.

AU - Sonobe, T.

AU - Shimojima, T.

AU - Oura, M.

AU - Shin, S.

AU - Bahramy, M. S.

AU - Arita, R.

AU - Nagaosa, N.

AU - Murakawa, H.

AU - Kaneko, Y.

AU - Tokura, Y.

AU - Ishizaka, K.

PY - 2012/8/16

Y1 - 2012/8/16

N2 - In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the three-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive hν-dependent soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well reproducible by the first-principles calculations, with huge spin splittings of ∼300 meV at the conduction-band minimum and valence-band maximum located in the kz=π/c plane. It provides direct experimental evidence of the 3D Rashba-type spin splitting in a bulk compound.

AB - In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the three-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive hν-dependent soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well reproducible by the first-principles calculations, with huge spin splittings of ∼300 meV at the conduction-band minimum and valence-band maximum located in the kz=π/c plane. It provides direct experimental evidence of the 3D Rashba-type spin splitting in a bulk compound.

U2 - 10.1103/PhysRevB.86.085204

DO - 10.1103/PhysRevB.86.085204

M3 - Article

SN - 2469-9969

VL - 86

JO - Physical Review B

JF - Physical Review B

IS - 8

M1 - 085204

ER -

Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting

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