THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation

I. Kostakis; D. Saeedkia; M. Missous

doi:10.1109/ASDAM.2012.6418569

THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation

I. Kostakis, D. Saeedkia, M. Missous

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

THz devices have been fabricated and evaluated as emitters and detectors in a time-domain spectroscopy (TDS) system. The devices employed planar aperture and dipole antenna geometries, which were made on the surface of novel Be doped lattice matched InGaAs-InAlAs multiple quantum well (MQW) structures grown at low temperature (LT) using Molecular Beam Epitaxy (MBE. Such structures exhibited high dark resistivity (> 105 /sq), very short carrier lifetimes (< 200 fs) and relatively high mobility (400 - 1800 cm 2/Vs). These properties resulted in system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, which are among the highest ever reported for this material system. © 2012 IEEE.

Original language	English
Title of host publication	ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems\|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems
Publisher	IEEE
Pages	195-198
Number of pages	3
ISBN (Print)	9781467311984
DOIs	https://doi.org/10.1109/ASDAM.2012.6418569
Publication status	Published - 2012
Event	9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012 - Smolenice, Slovakia Duration: 11 Nov 2012 → 15 Nov 2012

Conference

Conference	9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012
Country/Territory	Slovakia
City	Smolenice
Period	11/11/12 → 15/11/12

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10.1109/ASDAM.2012.6418569

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Kostakis, I., Saeedkia, D., & Missous, M. (2012). THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation. In ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems (pp. 195-198). IEEE. https://doi.org/10.1109/ASDAM.2012.6418569

Kostakis, I. ; Saeedkia, D. ; Missous, M. / THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation. ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems. IEEE, 2012. pp. 195-198

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title = "THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation",

abstract = "THz devices have been fabricated and evaluated as emitters and detectors in a time-domain spectroscopy (TDS) system. The devices employed planar aperture and dipole antenna geometries, which were made on the surface of novel Be doped lattice matched InGaAs-InAlAs multiple quantum well (MQW) structures grown at low temperature (LT) using Molecular Beam Epitaxy (MBE. Such structures exhibited high dark resistivity (> 105 /sq), very short carrier lifetimes (< 200 fs) and relatively high mobility (400 - 1800 cm 2/Vs). These properties resulted in system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, which are among the highest ever reported for this material system. {\textcopyright} 2012 IEEE.",

author = "I. Kostakis and D. Saeedkia and M. Missous",

year = "2012",

doi = "10.1109/ASDAM.2012.6418569",

language = "English",

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pages = "195--198",

booktitle = "ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems",

publisher = "IEEE",

address = "United States",

note = "9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012 ; Conference date: 11-11-2012 Through 15-11-2012",

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Kostakis, I, Saeedkia, D & Missous, M 2012, THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation. in ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems. IEEE, pp. 195-198, 9th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2012, Smolenice, Slovakia, 11/11/12. https://doi.org/10.1109/ASDAM.2012.6418569

THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation. / Kostakis, I.; Saeedkia, D.; Missous, M.
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems. IEEE, 2012. p. 195-198.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation

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AU - Missous, M.

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N2 - THz devices have been fabricated and evaluated as emitters and detectors in a time-domain spectroscopy (TDS) system. The devices employed planar aperture and dipole antenna geometries, which were made on the surface of novel Be doped lattice matched InGaAs-InAlAs multiple quantum well (MQW) structures grown at low temperature (LT) using Molecular Beam Epitaxy (MBE. Such structures exhibited high dark resistivity (> 105 /sq), very short carrier lifetimes (< 200 fs) and relatively high mobility (400 - 1800 cm 2/Vs). These properties resulted in system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, which are among the highest ever reported for this material system. © 2012 IEEE.

AB - THz devices have been fabricated and evaluated as emitters and detectors in a time-domain spectroscopy (TDS) system. The devices employed planar aperture and dipole antenna geometries, which were made on the surface of novel Be doped lattice matched InGaAs-InAlAs multiple quantum well (MQW) structures grown at low temperature (LT) using Molecular Beam Epitaxy (MBE. Such structures exhibited high dark resistivity (> 105 /sq), very short carrier lifetimes (< 200 fs) and relatively high mobility (400 - 1800 cm 2/Vs). These properties resulted in system responses with THz pulses having spectral range up to 3 THz and power to noise ratio of 60 dB, which are among the highest ever reported for this material system. © 2012 IEEE.

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DO - 10.1109/ASDAM.2012.6418569

M3 - Conference contribution

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BT - ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems

PB - IEEE

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Kostakis I, Saeedkia D, Missous M. THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation. In ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc.: Int. Conf. Adv. Semicond. Devices Microsystems. IEEE. 2012. p. 195-198 doi: 10.1109/ASDAM.2012.6418569

THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation

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