TY - GEN
T1 - THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes
AU - González, T.
AU - Íñiguez-de-la-Torre, I.
AU - Pardo, D.
AU - Song, A.M.
AU - Mateos, J.
PY - 2010
Y1 - 2010
N2 - By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes. By simulating two diodes in parallel, we analyze the possible loss of efficiency due to the technological dispersion in channel lengths.
AB - By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes. By simulating two diodes in parallel, we analyze the possible loss of efficiency due to the technological dispersion in channel lengths.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-77955953795&partnerID=MN8TOARS
U2 - 10.1109/ICIPRM.2010.5516357
DO - 10.1109/ICIPRM.2010.5516357
M3 - Conference contribution
BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ER -