THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes

T. González, I. Íñiguez-de-la-Torre, D. Pardo, A.M. Song, J. Mateos

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes. By simulating two diodes in parallel, we analyze the possible loss of efficiency due to the technological dispersion in channel lengths.
Original languageUndefined
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
Publication statusPublished - 2010

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