THz operation of self-switching nano-diodes and nano-transistors

J. Mateos; A. M. Song; B. G. Vasallo; D. Pardo; T. González

doi:10.1117/12.609126

THz operation of self-switching nano-diodes and nano-transistors

J. Mateos, A. M. Song, B. G. Vasallo, D. Pardo, T. González

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

By means of the microscopic transport description supplied by a semiclassical 2D Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode (SSD), recently proposed in [A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881 (2003)]. This device provides a rectifying behavior without the use of any doping junction or barrier structure (like in p-n or Schottky barrier diodes) and can be fabricated with a simple single-step lithographic process. The simple downscaling of this device and the use of materials providing high electron velocity (like high In content InGaAs channels) allows to envisage the fabrication of structures working in the THz range. With a slight modification of the geometry of the SSD, a lateral gate contact can be added, so that a nanometer self-switching transistor (SST) can be easily fabricated. We analyze the high frequency performance of the diodes and transistors and provide design considerations for the optimization of the downscaling process.

Original language	English
Title of host publication	Proceedings Volume 5838, Nanotechnology II
Subtitle of host publication	Microtechnologies for the new millennium 2005 \| 9-11 may 2005
Editors	Paolo Lugli, Laszlo B. Kish, Javier Mateos
Place of Publication	Sevilla, Spain
Pages	145-153
Number of pages	9
Volume	5838
DOIs	https://doi.org/10.1117/12.609126
Publication status	Published - 28 Jun 2005
Event	SPIE Micro Technologies: Microtechnologies for the new millennium 2005 - Sevilla, Spain Duration: 9 May 2005 → 11 May 2005 https://spie.org/conferences-and-exhibitions?webSyncID=50ced722-d57a-6461-2756-4c9b4308d90b&sessionGUID=025cd7c1-b5e3-ec4c-cde9-8d89a8ed23d1&_ga=2.144230653.932034874.1581506478-1137451804.1581506478&SSO=1

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE

Conference

Conference	SPIE Micro Technologies
Country/Territory	Spain
City	Sevilla
Period	9/05/05 → 11/05/05
Internet address	https://spie.org/conferences-and-exhibitions?webSyncID=50ced722-d57a-6461-2756-4c9b4308d90b&sessionGUID=025cd7c1-b5e3-ec4c-cde9-8d89a8ed23d1&_ga=2.144230653.932034874.1581506478-1137451804.1581506478&SSO=1

Keywords

Ballistic transport
Monte Carlo simulation
Nanoscale rectifier
Terahertz devices

Access to Document

10.1117/12.609126

Cite this

Mateos, J., Song, A. M., Vasallo, B. G., Pardo, D., & González, T. (2005). THz operation of self-switching nano-diodes and nano-transistors. In P. Lugli, L. B. Kish, & J. Mateos (Eds.), Proceedings Volume 5838, Nanotechnology II: Microtechnologies for the new millennium 2005 | 9-11 may 2005 (Vol. 5838, pp. 145-153). (Proceedings of SPIE - The International Society for Optical Engineering).. https://doi.org/10.1117/12.609126

Mateos, J. ; Song, A. M. ; Vasallo, B. G. et al. / THz operation of self-switching nano-diodes and nano-transistors. Proceedings Volume 5838, Nanotechnology II: Microtechnologies for the new millennium 2005 | 9-11 may 2005. editor / Paolo Lugli ; Laszlo B. Kish ; Javier Mateos. Vol. 5838 Sevilla, Spain, 2005. pp. 145-153 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{d42d2384807e40c58af3756bb2456e61,

title = "THz operation of self-switching nano-diodes and nano-transistors",

abstract = "By means of the microscopic transport description supplied by a semiclassical 2D Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode (SSD), recently proposed in [A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881 (2003)]. This device provides a rectifying behavior without the use of any doping junction or barrier structure (like in p-n or Schottky barrier diodes) and can be fabricated with a simple single-step lithographic process. The simple downscaling of this device and the use of materials providing high electron velocity (like high In content InGaAs channels) allows to envisage the fabrication of structures working in the THz range. With a slight modification of the geometry of the SSD, a lateral gate contact can be added, so that a nanometer self-switching transistor (SST) can be easily fabricated. We analyze the high frequency performance of the diodes and transistors and provide design considerations for the optimization of the downscaling process.",

keywords = "Ballistic transport, Monte Carlo simulation, Nanoscale rectifier, Terahertz devices",

author = "J. Mateos and Song, {A. M.} and Vasallo, {B. G.} and D. Pardo and T. Gonz{\'a}lez",

year = "2005",

month = jun,

day = "28",

doi = "10.1117/12.609126",

language = "English",

volume = "5838",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

pages = "145--153",

editor = "Paolo Lugli and Kish, {Laszlo B.} and Javier Mateos",

booktitle = "Proceedings Volume 5838, Nanotechnology II",

note = "SPIE Micro Technologies : Microtechnologies for the new millennium 2005 ; Conference date: 09-05-2005 Through 11-05-2005",

url = "https://spie.org/conferences-and-exhibitions?webSyncID=50ced722-d57a-6461-2756-4c9b4308d90b&sessionGUID=025cd7c1-b5e3-ec4c-cde9-8d89a8ed23d1&_ga=2.144230653.932034874.1581506478-1137451804.1581506478&SSO=1",

}

Mateos, J, Song, AM, Vasallo, BG, Pardo, D & González, T 2005, THz operation of self-switching nano-diodes and nano-transistors. in P Lugli, LB Kish & J Mateos (eds), Proceedings Volume 5838, Nanotechnology II: Microtechnologies for the new millennium 2005 | 9-11 may 2005. vol. 5838, Proceedings of SPIE - The International Society for Optical Engineering, Sevilla, Spain, pp. 145-153, SPIE Micro Technologies, Sevilla, Spain, 9/05/05. https://doi.org/10.1117/12.609126

THz operation of self-switching nano-diodes and nano-transistors. / Mateos, J.; Song, A. M.; Vasallo, B. G. et al.
Proceedings Volume 5838, Nanotechnology II: Microtechnologies for the new millennium 2005 | 9-11 may 2005. ed. / Paolo Lugli; Laszlo B. Kish; Javier Mateos. Vol. 5838 Sevilla, Spain, 2005. p. 145-153 (Proceedings of SPIE - The International Society for Optical Engineering).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - THz operation of self-switching nano-diodes and nano-transistors

AU - Mateos, J.

AU - Song, A. M.

AU - Vasallo, B. G.

AU - Pardo, D.

AU - González, T.

PY - 2005/6/28

Y1 - 2005/6/28

N2 - By means of the microscopic transport description supplied by a semiclassical 2D Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode (SSD), recently proposed in [A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881 (2003)]. This device provides a rectifying behavior without the use of any doping junction or barrier structure (like in p-n or Schottky barrier diodes) and can be fabricated with a simple single-step lithographic process. The simple downscaling of this device and the use of materials providing high electron velocity (like high In content InGaAs channels) allows to envisage the fabrication of structures working in the THz range. With a slight modification of the geometry of the SSD, a lateral gate contact can be added, so that a nanometer self-switching transistor (SST) can be easily fabricated. We analyze the high frequency performance of the diodes and transistors and provide design considerations for the optimization of the downscaling process.

AB - By means of the microscopic transport description supplied by a semiclassical 2D Monte Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic effects) of the nanoscale unipolar rectifying diode, so called self-switching diode (SSD), recently proposed in [A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881 (2003)]. This device provides a rectifying behavior without the use of any doping junction or barrier structure (like in p-n or Schottky barrier diodes) and can be fabricated with a simple single-step lithographic process. The simple downscaling of this device and the use of materials providing high electron velocity (like high In content InGaAs channels) allows to envisage the fabrication of structures working in the THz range. With a slight modification of the geometry of the SSD, a lateral gate contact can be added, so that a nanometer self-switching transistor (SST) can be easily fabricated. We analyze the high frequency performance of the diodes and transistors and provide design considerations for the optimization of the downscaling process.

KW - Ballistic transport

KW - Monte Carlo simulation

KW - Nanoscale rectifier

KW - Terahertz devices

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-28344435228&partnerID=MN8TOARS

U2 - 10.1117/12.609126

DO - 10.1117/12.609126

M3 - Conference contribution

VL - 5838

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 145

EP - 153

BT - Proceedings Volume 5838, Nanotechnology II

A2 - Lugli, Paolo

A2 - Kish, Laszlo B.

A2 - Mateos, Javier

CY - Sevilla, Spain

T2 - SPIE Micro Technologies

Y2 - 9 May 2005 through 11 May 2005

ER -

Mateos J, Song AM, Vasallo BG, Pardo D, González T. THz operation of self-switching nano-diodes and nano-transistors. In Lugli P, Kish LB, Mateos J, editors, Proceedings Volume 5838, Nanotechnology II: Microtechnologies for the new millennium 2005 | 9-11 may 2005. Vol. 5838. Sevilla, Spain. 2005. p. 145-153. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.609126

THz operation of self-switching nano-diodes and nano-transistors

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this