Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in Terahertz frequency multiplication chains

F. Amir; N. Farrington; C. Mitchell; M. Missous

doi:10.1117/12.864872

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in Terahertz frequency multiplication chains

F. Amir, N. Farrington, C. Mitchell, M. Missous

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (∼0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described. © 2010 SPIE.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering\|Proc SPIE Int Soc Opt Eng
Volume	7837
DOIs	https://doi.org/10.1117/12.864872
Publication status	Published - 2010
Event	Millimetre Wave and Terahertz Sensors and Technology III - Toulouse Duration: 1 Jul 2010 → …

Conference

Conference	Millimetre Wave and Terahertz Sensors and Technology III
City	Toulouse
Period	1/07/10 → …

Keywords

Gunn diode
Millimetre-wave imaging
Millimetre-wave multiplier
Physical modelling
Security imaging
SILVACO
Transferred electron device

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10.1117/12.864872

Cite this

@inproceedings{f8d01faf08c74573b3332d84dd3a017f,

title = "Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in Terahertz frequency multiplication chains",

abstract = "Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (∼0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described. {\textcopyright} 2010 SPIE.",

keywords = "Gunn diode, Millimetre-wave imaging, Millimetre-wave multiplier, Physical modelling, Security imaging, SILVACO, Transferred electron device",

author = "F. Amir and N. Farrington and C. Mitchell and M. Missous",

year = "2010",

doi = "10.1117/12.864872",

language = "English",

isbn = "9780819483553",

volume = "7837",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering|Proc SPIE Int Soc Opt Eng",

note = "Millimetre Wave and Terahertz Sensors and Technology III ; Conference date: 01-07-2010",

}

Amir, F, Farrington, N, Mitchell, C & Missous, M 2010, Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in Terahertz frequency multiplication chains. in Proceedings of SPIE - The International Society for Optical Engineering|Proc SPIE Int Soc Opt Eng. vol. 7837, Millimetre Wave and Terahertz Sensors and Technology III, Toulouse, 1/07/10. https://doi.org/10.1117/12.864872

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in Terahertz frequency multiplication chains. / Amir, F.; Farrington, N.; Mitchell, C. et al.
Proceedings of SPIE - The International Society for Optical Engineering|Proc SPIE Int Soc Opt Eng. Vol. 7837 2010.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in Terahertz frequency multiplication chains

AU - Amir, F.

AU - Farrington, N.

AU - Mitchell, C.

AU - Missous, M.

PY - 2010

Y1 - 2010

N2 - Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (∼0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described. © 2010 SPIE.

AB - Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (∼0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described. © 2010 SPIE.

KW - Gunn diode

KW - Millimetre-wave imaging

KW - Millimetre-wave multiplier

KW - Physical modelling

KW - Security imaging

KW - SILVACO

KW - Transferred electron device

U2 - 10.1117/12.864872

DO - 10.1117/12.864872

M3 - Conference contribution

SN - 9780819483553

VL - 7837

BT - Proceedings of SPIE - The International Society for Optical Engineering|Proc SPIE Int Soc Opt Eng

T2 - Millimetre Wave and Terahertz Sensors and Technology III

Y2 - 1 July 2010

ER -

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in Terahertz frequency multiplication chains

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