Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Cher Xuan Zhang; Bin Wang; Sarah Haigh; Guo Xing Duan; En Xia Zhang; Daniel M Fleetwood; Michael L Alles; Ronald D Schrimpf; Aidan P Rooney; Ekaterina Khestanova; Gregory Auton

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Cher Xuan Zhang, Bin Wang, Sarah Haigh, Guo Xing Duan, En Xia Zhang, Daniel M Fleetwood, Michael L Alles, Ronald D Schrimpf, Aidan P Rooney, Ekaterina Khestanova, Gregory Auton

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2868 - 2873
Journal	IEEE Transactions on Nuclear Science
Volume	61
Issue number	6
Publication status	Published - 2014

Cite this

@article{997343e26dc04f1d89ec8f6c2719c058,

title = "Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices",

author = "Zhang, {Cher Xuan} and Bin Wang and Sarah Haigh and Duan, {Guo Xing} and Zhang, {En Xia} and Fleetwood, {Daniel M} and Alles, {Michael L} and Schrimpf, {Ronald D} and Rooney, {Aidan P} and Ekaterina Khestanova and Gregory Auton",

year = "2014",

language = "English",

volume = "61",

pages = "2868 -- 2873",

journal = "IEEE Transactions on Nuclear Science ",

issn = "0018-9499",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

AU - Zhang, Cher Xuan

AU - Wang, Bin

AU - Haigh, Sarah

AU - Duan, Guo Xing

AU - Zhang, En Xia

AU - Fleetwood, Daniel M

AU - Alles, Michael L

AU - Schrimpf, Ronald D

AU - Rooney, Aidan P

AU - Khestanova, Ekaterina

AU - Auton, Gregory

PY - 2014

Y1 - 2014

M3 - Article

SN - 0018-9499

VL - 61

SP - 2868

EP - 2873

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -