Towards graphene field effect transistors

M. C. Lemme; T. J. Echtermeyer; M. Baus; B. N. Szafranek; M. Schmidt; H. Kurz

doi:10.1149/1.2778398

Towards graphene field effect transistors

M. C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, M. Schmidt, H. Kurz

Research output: Contribution to journal › Article › peer-review

Abstract

Field effect devices (FED) manufactured from monolayer graphene are investigated. A conventional CMOS-compatible top-down process flow is applied, except for graphene deposition. From IV-characteristics carrier mobilities in graphene pseudo-MOS structures are extracted and compared to state-of-the-art silicon MOSFETs. The extracted values outperform the universal mobility of silicon and silicon-on-insulaior MOSFETs. ©The Electrochemical Society.

Original language	English
Pages (from-to)	413-419
Number of pages	6
Journal	ECS Transactions
Volume	11
Issue number	6
DOIs	https://doi.org/10.1149/1.2778398
Publication status	Published - 2007

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title = "Towards graphene field effect transistors",

abstract = "Field effect devices (FED) manufactured from monolayer graphene are investigated. A conventional CMOS-compatible top-down process flow is applied, except for graphene deposition. From IV-characteristics carrier mobilities in graphene pseudo-MOS structures are extracted and compared to state-of-the-art silicon MOSFETs. The extracted values outperform the universal mobility of silicon and silicon-on-insulaior MOSFETs. {\textcopyright}The Electrochemical Society.",

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AU - Lemme, M. C.

AU - Echtermeyer, T. J.

AU - Baus, M.

AU - Szafranek, B. N.

AU - Schmidt, M.

AU - Kurz, H.

PY - 2007

Y1 - 2007

N2 - Field effect devices (FED) manufactured from monolayer graphene are investigated. A conventional CMOS-compatible top-down process flow is applied, except for graphene deposition. From IV-characteristics carrier mobilities in graphene pseudo-MOS structures are extracted and compared to state-of-the-art silicon MOSFETs. The extracted values outperform the universal mobility of silicon and silicon-on-insulaior MOSFETs. ©The Electrochemical Society.

AB - Field effect devices (FED) manufactured from monolayer graphene are investigated. A conventional CMOS-compatible top-down process flow is applied, except for graphene deposition. From IV-characteristics carrier mobilities in graphene pseudo-MOS structures are extracted and compared to state-of-the-art silicon MOSFETs. The extracted values outperform the universal mobility of silicon and silicon-on-insulaior MOSFETs. ©The Electrochemical Society.

U2 - 10.1149/1.2778398

DO - 10.1149/1.2778398

M3 - Article

SN - 1938-5862

VL - 11

SP - 413

EP - 419

JO - ECS Transactions

JF - ECS Transactions

IS - 6

ER -

Towards graphene field effect transistors

Abstract

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