Trace the origin of defects in power semiconductor devices using deep level transient spectroscopy

Jianqing Wen, Jan Evans-Freeman, A. R. Peaker

Research output: Contribution to conferencePaperpeer-review

Abstract

Deep Level Transient Spectroscopy (DLTS) technique was used to detect the defects in the failed Gate Turn Off thyristor power devices. Comparison of the measured parameters of the deep defects to the literature revealed the origin of the defects and explains why the GTO devices have abnormally high leakage currents and short lifetimes.

Original languageEnglish
Pages565-566
Number of pages2
Publication statusPublished - 1999
Event8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore
Duration: 8 Sept 199910 Sept 1999

Conference

Conference8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
Country/TerritorySingapore
CitySingapore
Period8/09/9910/09/99

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