Trace the origin of defects in power semiconductor devices using deep level transient spectroscopy

Jianqing Wen; Jan Evans-Freeman; A. R. Peaker

Trace the origin of defects in power semiconductor devices using deep level transient spectroscopy

Jianqing Wen^*, Jan Evans-Freeman, A. R. Peaker

^*Corresponding author for this work

UMIST

Research output: Contribution to conference › Paper › peer-review

Abstract

Deep Level Transient Spectroscopy (DLTS) technique was used to detect the defects in the failed Gate Turn Off thyristor power devices. Comparison of the measured parameters of the deep defects to the literature revealed the origin of the defects and explains why the GTO devices have abnormally high leakage currents and short lifetimes.

Original language	English
Pages	565-566
Number of pages	2
Publication status	Published - 1999
Event	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore Duration: 8 Sept 1999 → 10 Sept 1999

Conference

Conference	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
Country/Territory	Singapore
City	Singapore
Period	8/09/99 → 10/09/99

Cite this

@conference{2a1b7f7aaf634c9f9768da3521a210a6,

title = "Trace the origin of defects in power semiconductor devices using deep level transient spectroscopy",

abstract = "Deep Level Transient Spectroscopy (DLTS) technique was used to detect the defects in the failed Gate Turn Off thyristor power devices. Comparison of the measured parameters of the deep defects to the literature revealed the origin of the defects and explains why the GTO devices have abnormally high leakage currents and short lifetimes.",

author = "Jianqing Wen and Jan Evans-Freeman and Peaker, {A. R.}",

year = "1999",

language = "English",

pages = "565--566",

note = "8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 ; Conference date: 08-09-1999 Through 10-09-1999",

}

TY - CONF

T1 - Trace the origin of defects in power semiconductor devices using deep level transient spectroscopy

AU - Wen, Jianqing

AU - Evans-Freeman, Jan

AU - Peaker, A. R.

PY - 1999

Y1 - 1999

N2 - Deep Level Transient Spectroscopy (DLTS) technique was used to detect the defects in the failed Gate Turn Off thyristor power devices. Comparison of the measured parameters of the deep defects to the literature revealed the origin of the defects and explains why the GTO devices have abnormally high leakage currents and short lifetimes.

AB - Deep Level Transient Spectroscopy (DLTS) technique was used to detect the defects in the failed Gate Turn Off thyristor power devices. Comparison of the measured parameters of the deep defects to the literature revealed the origin of the defects and explains why the GTO devices have abnormally high leakage currents and short lifetimes.

UR - http://www.scopus.com/inward/record.url?scp=1842791705&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1842791705

SP - 565

EP - 566

T2 - 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99

Y2 - 8 September 1999 through 10 September 1999

ER -

Trace the origin of defects in power semiconductor devices using deep level transient spectroscopy

Abstract

Conference

Other files and links

Fingerprint

Cite this