Abstract
A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400μm long pixel side, this resulting in a pn inter-electrode distance of ∼71μm. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014. © 2010 Elsevier B.V.
Original language | English |
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Pages (from-to) | S42-S49 |
Journal | Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment |
Volume | 636 |
Issue number | 1 |
DOIs | |
Publication status | Published - 21 Apr 2011 |
Keywords
- 3D pixels
- Charge sharing
- High energy physics
- Radiation hardness
- Test beam
- Tracking efficiency