Transport mechanism in sub 100 °C processed high mobility polycrystalline ZnO transparent thin film transistors

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Abstract

We demonstrate high performance ZnO TFTs with record field effect mobility 229 cm 2 /V.s, on/off ratio exceeding 10 7 (limited only by our simple device structure) and sub threshold swing (S) <;150 mV/dec, surpassing the performance of many reported amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors. 1,2 The tail state distribution of the density of states (DOS) in ZnO extracted via 2D numerical simulations matched to experiment, demonstrates unequivocally a similar mobility mechanism that underpins all Transparent Conducting Oxides (TCOs)-whether amorphous or not. The characteristic Temperature of ZnO is found to be ~463 K and the tail state density of states (DOS) is ~1.3 ×10 20 cm -3 eV -1 .
Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting (IEDM)
PublisherIEEE
Pages28.1.1-28.1.4
Number of pages4
Volume 2016
EditionFebruary
ISBN (Print)9781467398930
DOIs
Publication statusPublished - 2015
Event61st IEEE International Electron Devices Meeting - Washington, United States
Duration: 7 Dec 20159 Dec 2015
Conference number: CFP15IED-USB 119534

Conference

Conference61st IEEE International Electron Devices Meeting
Abbreviated titleIEDM 2015
Country/TerritoryUnited States
CityWashington
Period7/12/159/12/15

Keywords

  • Zinc oxide
  • II-VI semiconductor materials
  • Thin film transistors
  • Performance evaluation
  • Logic gates
  • Electron traps

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