Abstract
Tin sulfide (SnS) thin films are deposited using simple tin thiosemicarbazone complexes of the type Bz3SnCl(L) (L = thiosemicarbazones of salicylaldehye and 4-chlorobenzaldehyde). Thin films are deposited using aerosol-assisted (AA) CVD in the range 375-475°C. X-ray diffraction (XRD) shows the formation of SnS regardless of growth temperature and precursor type. Scanning electron microscope (SEM) images show that the films have wafer-like morphology, and the growth temperatures do not have a profound effect on morphology. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
Original language | English |
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Pages (from-to) | 292-295 |
Number of pages | 3 |
Journal | Chemical Vapor Deposition |
Volume | 14 |
Issue number | 9-10 |
DOIs | |
Publication status | Published - Sept 2008 |
Keywords
- Single-source precursors
- Thin films
- Tin sulfide
- Tin thiosemicarbazones