Trivacancy in silicon: A combined DLTS and ab-initio modeling study

V. P. Markevich; A. R. Peaker; S. B. Lastovskii; L. I. Murin; J. Coutinho; A. V. Markevich; V. J B Torres; P. R. Briddon; L. Dobaczewski; E. V. Monakhov; B. G. Svensson

doi:10.1016/j.physb.2009.08.142

Trivacancy in silicon: A combined DLTS and ab-initio modeling study

V. P. Markevich^*, A. R. Peaker, S. B. Lastovskii, L. I. Murin, J. Coutinho, A. V. Markevich, V. J B Torres, P. R. Briddon, L. Dobaczewski, E. V. Monakhov, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V₃) in Si. It is found that in the neutral charge state the V₃ is bistable, with the "fourfold" configuration being lower in energy than the (1 1 0) planar configuration. V₃ in the (1 1 0) planar configuration gives rise to two acceptor levels at E_c-0.36 eV and E_c-0.46 eV in the gap, while in the "fourfold" configuration the defect has trigonal symmetry and an acceptor level at E_c-0.075 eV.

Original language	English
Pages (from-to)	4565-4567
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.142
Publication status	Published - 15 Dec 2009

Keywords

Ab-initio modeling
DLTS
Energy levels
Silicon
Trivacancy

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10.1016/j.physb.2009.08.142

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title = "Trivacancy in silicon: A combined DLTS and ab-initio modeling study",

abstract = "Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V3) in Si. It is found that in the neutral charge state the V3 is bistable, with the {"}fourfold{"} configuration being lower in energy than the (1 1 0) planar configuration. V3 in the (1 1 0) planar configuration gives rise to two acceptor levels at Ec-0.36 eV and Ec-0.46 eV in the gap, while in the {"}fourfold{"} configuration the defect has trigonal symmetry and an acceptor level at Ec-0.075 eV.",

keywords = "Ab-initio modeling, DLTS, Energy levels, Silicon, Trivacancy",

author = "Markevich, {V. P.} and Peaker, {A. R.} and Lastovskii, {S. B.} and Murin, {L. I.} and J. Coutinho and Markevich, {A. V.} and Torres, {V. J B} and Briddon, {P. R.} and L. Dobaczewski and Monakhov, {E. V.} and Svensson, {B. G.}",

year = "2009",

month = dec,

day = "15",

doi = "10.1016/j.physb.2009.08.142",

language = "English",

volume = "404",

pages = "4565--4567",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "American Physical Society",

number = "23-24",

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TY - JOUR

T1 - Trivacancy in silicon

T2 - A combined DLTS and ab-initio modeling study

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Lastovskii, S. B.

AU - Murin, L. I.

AU - Coutinho, J.

AU - Markevich, A. V.

AU - Torres, V. J B

AU - Briddon, P. R.

AU - Dobaczewski, L.

AU - Monakhov, E. V.

AU - Svensson, B. G.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V3) in Si. It is found that in the neutral charge state the V3 is bistable, with the "fourfold" configuration being lower in energy than the (1 1 0) planar configuration. V3 in the (1 1 0) planar configuration gives rise to two acceptor levels at Ec-0.36 eV and Ec-0.46 eV in the gap, while in the "fourfold" configuration the defect has trigonal symmetry and an acceptor level at Ec-0.075 eV.

AB - Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V3) in Si. It is found that in the neutral charge state the V3 is bistable, with the "fourfold" configuration being lower in energy than the (1 1 0) planar configuration. V3 in the (1 1 0) planar configuration gives rise to two acceptor levels at Ec-0.36 eV and Ec-0.46 eV in the gap, while in the "fourfold" configuration the defect has trigonal symmetry and an acceptor level at Ec-0.075 eV.

KW - Ab-initio modeling

KW - DLTS

KW - Energy levels

KW - Silicon

KW - Trivacancy

UR - http://www.scopus.com/inward/record.url?scp=74349085204&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2009.08.142

DO - 10.1016/j.physb.2009.08.142

M3 - Article

AN - SCOPUS:74349085204

SN - 0921-4526

VL - 404

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EP - 4567

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 23-24

ER -

Trivacancy in silicon: A combined DLTS and ab-initio modeling study

Abstract

Keywords

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