Tunable berry curvature, valley and spin hall effect in bilayer mos2

Andor Kormányos*, Viktor Zólyomi, Vladimir I. Fal'ko, Guido Burkard

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

We show that in bilayers of transition metal dichalcogenides (TMDCs) both intra-layer and inter-layer couplings give important contributions to the Berry curvature in the K and K valleys of the Brillouin zone. Because of the inter-layer contribution the Berry curvature is stacking dependent and the commonly available 3R type and 2H type bilayers have different and highly tunable Berry curvature properties. The Berry curvature leads to valley Hall and spin Hall effects and we study them in 2H stacked bilayer MoS2. Interestingly, the Hall conductivities may change sign as a function of the external electric field in this system which is reminiscent of the properties of lattice Chern insulators.

Original languageEnglish
Title of host publicationSpintronics XII
EditorsHenri-Jean M. Drouhin, Jean-Eric Wegrowe, Manijeh Razeghi, Henri Jaffres
PublisherSPIE
ISBN (Electronic)9781510628731
DOIs
Publication statusPublished - 16 Sept 2019
EventSpintronics XII 2019 - San Diego, United States
Duration: 11 Aug 201915 Aug 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11090
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSpintronics XII 2019
Country/TerritoryUnited States
CitySan Diego
Period11/08/1915/08/19

Keywords

  • Berry curvature
  • Electronic properties
  • Hall effects
  • transition metal dichalcogenides

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