Tunable D peak in gated graphene

Anna Ott; Ivan A. Verzhbitskiy; Joseph Clough; Axel Eckmann; Thanasis Georgiou; Cinzia Casiraghi

doi:10.1007/s12274-013-0399-2

Tunable D peak in gated graphene

Anna Ott, Ivan A. Verzhbitskiy, Joseph Clough, Axel Eckmann, Thanasis Georgiou, Cinzia Casiraghi

Research output: Contribution to journal › Article › peer-review

Abstract

We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. [Figure not available: see fulltext.] © 2013 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

Original language	English
Pages (from-to)	338-344
Number of pages	6
Journal	Nano Research
Volume	7
Issue number	3
DOIs	https://doi.org/10.1007/s12274-013-0399-2
Publication status	Published - 2014

Keywords

defects
doping
electrochemistry
gating
graphene

Access to Document

10.1007/s12274-013-0399-2

http://www.springer.com/materials/nanotechnology/journal/12274

Cite this

@article{01de36ec668e4aef919bf1e3704f380a,

title = "Tunable D peak in gated graphene",

abstract = "We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. [Figure not available: see fulltext.] {\textcopyright} 2013 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.",

keywords = "defects, doping, electrochemistry, gating, graphene",

author = "Anna Ott and Verzhbitskiy, {Ivan A.} and Joseph Clough and Axel Eckmann and Thanasis Georgiou and Cinzia Casiraghi",

year = "2014",

doi = "10.1007/s12274-013-0399-2",

language = "English",

volume = "7",

pages = "338--344",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Tsinghua University Press ",

number = "3",

}

TY - JOUR

T1 - Tunable D peak in gated graphene

AU - Ott, Anna

AU - Verzhbitskiy, Ivan A.

AU - Clough, Joseph

AU - Eckmann, Axel

AU - Georgiou, Thanasis

AU - Casiraghi, Cinzia

PY - 2014

Y1 - 2014

N2 - We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. [Figure not available: see fulltext.] © 2013 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

AB - We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. [Figure not available: see fulltext.] © 2013 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

KW - defects

KW - doping

KW - electrochemistry

KW - gating

KW - graphene

U2 - 10.1007/s12274-013-0399-2

DO - 10.1007/s12274-013-0399-2

M3 - Article

SN - 1998-0124

VL - 7

SP - 338

EP - 344

JO - Nano Research

JF - Nano Research

IS - 3

ER -

Tunable D peak in gated graphene

Abstract

Keywords

Access to Document

Fingerprint

Cite this