Tunable D peak in gated graphene

Anna Ott, Ivan A. Verzhbitskiy, Joseph Clough, Axel Eckmann, Thanasis Georgiou, Cinzia Casiraghi

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. [Figure not available: see fulltext.] © 2013 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
    Original languageEnglish
    Pages (from-to)338-344
    Number of pages6
    JournalNano Research
    Volume7
    Issue number3
    DOIs
    Publication statusPublished - 2014

    Keywords

    • defects
    • doping
    • electrochemistry
    • gating
    • graphene

    Fingerprint

    Dive into the research topics of 'Tunable D peak in gated graphene'. Together they form a unique fingerprint.

    Cite this