Tunable graphene system with two decoupled monolayers

H. Schmidt, T. Lüdtke, P. Barthold, E. McCann, V. I. Fal'Ko, R. J. Haug

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    The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.

    Original languageEnglish
    Article number172108
    JournalApplied Physics Letters
    Issue number17
    Publication statusPublished - 2008

    Research Beacons, Institutes and Platforms

    • National Graphene Institute


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