Tunable spin-orbit coupling in two-dimensional InSe

Adrian Ceferino, Samuel Magorrian, V. Zolyomi, Denis Bandurin, Andre Geim, A. Patane, Z.D. Kovalyuk, Z.R. Kudrynskyi, Irina Grigorieva, Vladimir Fal'ko

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We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid k⋅p tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.
Original languageEnglish
Article number125432
JournalPhysical Review B
Publication statusPublished - 22 Sept 2021

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  • National Graphene Institute


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