Abstract
The preparation of high-quality copper indium sulphide, CuInS2 photo-absorber material with
tunable properties for efficient, low-cost, thin film solar cells using scalable methods remains a
challenge. In order to address this, high quality off-stoichiometric undoped and Mn, Ni and Agdoped CuInS2 (CIS) thin films have been deposited onto glass substrates by aerosol-assisted
chemical vapour deposition (AACVD) using metal diethyldithiocarbamate precursors at
temperatures of 350, 400 and 450 °C. Data from powder X-ray diffraction (p-XRD), Raman
spectroscopy and scanning electron microscopy-energy dispersive X-ray spectroscopy (SEMEDS) suggest a correlation of morphology and composition of tetragonal phase (chalcopyrite and
copper-gold-type) sulphur-deficient microcrystalline CIS thin films. For undoped thin films, nearinfrared optical absorption and emission with tunable band gap between 1.32 and 1.42 eV are
likely associated with donor-acceptor pairs involving deep or shallow electronic states such as
sulphur vacancies (VS
), indium-copper anti-sites (InCu
) and indium interstitials (Ini
) as donors
and copper vacancies (VCu′) as acceptors. Whilst Mn-doped thin films exhibit minimal tunable
properties, Ni and Ag-doped films exhibit tunable morphology, composition and near-infrared
absorption for small dopant content. Though further studies are required to explore the defect
chemistry, these results show the utility of AACVD in tuning structural, morphological and optical
properties of undoped, Mn, Ni and Ag-doped CIS thin films.
Keywords: copper indium sulphide, AACVD, doped thin films, tunable optical properties,
photovoltaic material.
tunable properties for efficient, low-cost, thin film solar cells using scalable methods remains a
challenge. In order to address this, high quality off-stoichiometric undoped and Mn, Ni and Agdoped CuInS2 (CIS) thin films have been deposited onto glass substrates by aerosol-assisted
chemical vapour deposition (AACVD) using metal diethyldithiocarbamate precursors at
temperatures of 350, 400 and 450 °C. Data from powder X-ray diffraction (p-XRD), Raman
spectroscopy and scanning electron microscopy-energy dispersive X-ray spectroscopy (SEMEDS) suggest a correlation of morphology and composition of tetragonal phase (chalcopyrite and
copper-gold-type) sulphur-deficient microcrystalline CIS thin films. For undoped thin films, nearinfrared optical absorption and emission with tunable band gap between 1.32 and 1.42 eV are
likely associated with donor-acceptor pairs involving deep or shallow electronic states such as
sulphur vacancies (VS
), indium-copper anti-sites (InCu
) and indium interstitials (Ini
) as donors
and copper vacancies (VCu′) as acceptors. Whilst Mn-doped thin films exhibit minimal tunable
properties, Ni and Ag-doped films exhibit tunable morphology, composition and near-infrared
absorption for small dopant content. Though further studies are required to explore the defect
chemistry, these results show the utility of AACVD in tuning structural, morphological and optical
properties of undoped, Mn, Ni and Ag-doped CIS thin films.
Keywords: copper indium sulphide, AACVD, doped thin films, tunable optical properties,
photovoltaic material.
| Original language | English |
|---|---|
| Article number | 106224 |
| Pages (from-to) | 106224 |
| Journal | Materials science in semiconductor processing |
| Volume | 137 |
| Early online date | 24 Sept 2021 |
| DOIs | |
| Publication status | Published - 1 Jan 2022 |
Keywords
- AACVD
- Copper indium sulphide
- Doped thin films
- Photovoltaic material
- Tunable optical properties
