Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Mark T. Greenaway; E. E. Vdovin; Davit Ghazaryan; Abhishek Misra; Artem Mishchenko; Yang Cao; Zihao Wang; John Wallbank; Matthew Holwill; Sergey Morozov; Amalia Patane; Andre Geim; Vladimir Fal'ko; Konstantin Novoselov; Laurence Eaves

doi:10.1038/s42005-018-0097-1

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Mark T. Greenaway, E. E. Vdovin, Davit Ghazaryan, Abhishek Misra, Artem Mishchenko, Yang Cao, Zihao Wang, John Wallbank, Matthew Holwill, Sergey Morozov, Amalia Patane, Andre Geim, Vladimir Fal'ko, Konstantin Novoselov, Laurence Eaves

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Abstract

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.

Original language	English
Journal	Communications physics
DOIs	https://doi.org/10.1038/s42005-018-0097-1
Publication status	Published - 14 Dec 2018

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https://arxiv.org/pdf/1810.01312.pdf

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title = "Tunnel spectroscopy of localised electronic states in hexagonal boron nitride",

abstract = "Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.",

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doi = "10.1038/s42005-018-0097-1",

language = "English",

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TY - JOUR

T1 - Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

AU - Greenaway, Mark T.

AU - Vdovin, E. E.

AU - Ghazaryan, Davit

AU - Misra, Abhishek

AU - Mishchenko, Artem

AU - Cao, Yang

AU - Wang, Zihao

AU - Wallbank, John

AU - Holwill, Matthew

AU - Morozov, Sergey

AU - Patane, Amalia

AU - Geim, Andre

AU - Fal'ko, Vladimir

AU - Novoselov, Konstantin

AU - Eaves, Laurence

PY - 2018/12/14

Y1 - 2018/12/14

N2 - Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.

AB - Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.

U2 - 10.1038/s42005-018-0097-1

DO - 10.1038/s42005-018-0097-1

M3 - Article

JO - Communications physics

JF - Communications physics

ER -

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

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