Tunneling resonances in structures with a two-step barrier

Yu N. Khanin; E. E. Vdovin; Yu V. Dubrovskiǐ; K. S. Novoselov; T. G. Andersson

doi:10.1134/1.567762

Tunneling resonances in structures with a two-step barrier

Yu N. Khanin, E. E. Vdovin, Yu V. Dubrovskiǐ, K. S. Novoselov, T. G. Andersson

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Abstract

Electron transport through an asymmetric heterostructure with a two-step barrier N+GaAs/N-GaAs/Al0.4Ga0.6As/Al 0.03Ga0.97As/N-GaAs/N+GaAs was investigated. Features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current. The virtual levels form above the bottom step or above one of the spacers (N-GaAs layer) as a result of interference of electrons, in the first case on account of reflection from the Al0.4Ga0.6As barrier and a potential jump at the Al0.03Ga0.97As/N-GaAs interface and in the second case - from the Al0.4Ga0.6As barrier and the potential gradient at the N-GaAs/N+GaAs junction, reflection from which is likewise coherent. © 1998 American Institute of Physics.

Original language	English
Pages (from-to)	863-868
Number of pages	5
Journal	JETP Letters
Volume	67
Issue number	10
DOIs	https://doi.org/10.1134/1.567762
Publication status	Published - 1998

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@article{9bf8eed416e749c18442c6644b0ce76e,

title = "Tunneling resonances in structures with a two-step barrier",

abstract = "Electron transport through an asymmetric heterostructure with a two-step barrier N+GaAs/N-GaAs/Al0.4Ga0.6As/Al 0.03Ga0.97As/N-GaAs/N+GaAs was investigated. Features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current. The virtual levels form above the bottom step or above one of the spacers (N-GaAs layer) as a result of interference of electrons, in the first case on account of reflection from the Al0.4Ga0.6As barrier and a potential jump at the Al0.03Ga0.97As/N-GaAs interface and in the second case - from the Al0.4Ga0.6As barrier and the potential gradient at the N-GaAs/N+GaAs junction, reflection from which is likewise coherent. {\textcopyright} 1998 American Institute of Physics.",

author = "Khanin, {Yu N.} and Vdovin, {E. E.} and Dubrovskiǐ, {Yu V.} and Novoselov, {K. S.} and Andersson, {T. G.}",

year = "1998",

doi = "10.1134/1.567762",

language = "English",

volume = "67",

pages = "863--868",

journal = "JETP Letters",

issn = "1090-6487",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "10",

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TY - JOUR

T1 - Tunneling resonances in structures with a two-step barrier

AU - Khanin, Yu N.

AU - Vdovin, E. E.

AU - Dubrovskiǐ, Yu V.

AU - Novoselov, K. S.

AU - Andersson, T. G.

PY - 1998

Y1 - 1998

N2 - Electron transport through an asymmetric heterostructure with a two-step barrier N+GaAs/N-GaAs/Al0.4Ga0.6As/Al 0.03Ga0.97As/N-GaAs/N+GaAs was investigated. Features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current. The virtual levels form above the bottom step or above one of the spacers (N-GaAs layer) as a result of interference of electrons, in the first case on account of reflection from the Al0.4Ga0.6As barrier and a potential jump at the Al0.03Ga0.97As/N-GaAs interface and in the second case - from the Al0.4Ga0.6As barrier and the potential gradient at the N-GaAs/N+GaAs junction, reflection from which is likewise coherent. © 1998 American Institute of Physics.

AB - Electron transport through an asymmetric heterostructure with a two-step barrier N+GaAs/N-GaAs/Al0.4Ga0.6As/Al 0.03Ga0.97As/N-GaAs/N+GaAs was investigated. Features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current. The virtual levels form above the bottom step or above one of the spacers (N-GaAs layer) as a result of interference of electrons, in the first case on account of reflection from the Al0.4Ga0.6As barrier and a potential jump at the Al0.03Ga0.97As/N-GaAs interface and in the second case - from the Al0.4Ga0.6As barrier and the potential gradient at the N-GaAs/N+GaAs junction, reflection from which is likewise coherent. © 1998 American Institute of Physics.

U2 - 10.1134/1.567762

DO - 10.1134/1.567762

M3 - Article

SN - 1090-6487

VL - 67

SP - 863

EP - 868

JO - JETP Letters

JF - JETP Letters

IS - 10

ER -

Tunneling resonances in structures with a two-step barrier

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