Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors

T. Tauqeer; J. Sexton; F. Amir; M. Missous

doi:10.1109/ASDAM.2008.4743335

Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors

T. Tauqeer, J. Sexton, F. Amir, M. Missous

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (42O°C) while conserving extremely high quality materials. A self- aligned ransistor with an emitter area of 5×5μm2 demonstrated a low offset voltage of 15OmV and high current gain of 90. An excellent agreement with the measured data was chieved using physical modelling pakages developed by SILVACO. © 2008 IEEE.

Original language	English
Title of host publication	ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems\|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems
Pages	271-274
Number of pages	3
DOIs	https://doi.org/10.1109/ASDAM.2008.4743335
Publication status	Published - 2008
Event	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice Duration: 1 Jul 2008 → … http://<Go to ISI>://000263223200047

Conference

Conference	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
City	Smolenice
Period	1/07/08 → …
Internet address	http://<Go to ISI>://000263223200047

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10.1109/ASDAM.2008.4743335

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Tauqeer, T., Sexton, J., Amir, F., & Missous, M. (2008). Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems (pp. 271-274) https://doi.org/10.1109/ASDAM.2008.4743335

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title = "Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors",

abstract = "State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (42O°C) while conserving extremely high quality materials. A self- aligned ransistor with an emitter area of 5×5μm2 demonstrated a low offset voltage of 15OmV and high current gain of 90. An excellent agreement with the measured data was chieved using physical modelling pakages developed by SILVACO. {\textcopyright} 2008 IEEE.",

author = "T. Tauqeer and J. Sexton and F. Amir and M. Missous",

note = "Tauqeer, T. Sexton, J. Amir, F. Missous, M.; 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 ; Conference date: 01-07-2008",

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doi = "10.1109/ASDAM.2008.4743335",

language = "English",

isbn = "9781424423262",

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Tauqeer, T, Sexton, J, Amir, F & Missous, M 2008, Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors. in ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. pp. 271-274, 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, 1/07/08. https://doi.org/10.1109/ASDAM.2008.4743335

Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors. / Tauqeer, T.; Sexton, J.; Amir, F. et al.
ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 271-274.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Tauqeer, T.

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N2 - State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (42O°C) while conserving extremely high quality materials. A self- aligned ransistor with an emitter area of 5×5μm2 demonstrated a low offset voltage of 15OmV and high current gain of 90. An excellent agreement with the measured data was chieved using physical modelling pakages developed by SILVACO. © 2008 IEEE.

AB - State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (42O°C) while conserving extremely high quality materials. A self- aligned ransistor with an emitter area of 5×5μm2 demonstrated a low offset voltage of 15OmV and high current gain of 90. An excellent agreement with the measured data was chieved using physical modelling pakages developed by SILVACO. © 2008 IEEE.

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DO - 10.1109/ASDAM.2008.4743335

M3 - Conference contribution

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T2 - 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008

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Tauqeer T, Sexton J, Amir F, Missous M. Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 271-274 doi: 10.1109/ASDAM.2008.4743335

Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors

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