@inproceedings{54ee96e318c14e1192cf2e8ad5a179a5,
title = "Ultra high frequency performance in all ternary: In0.52Al 0.48As-In0.53Ga0.47As-In0.52Al 0.48As DHBT",
abstract = "A new all ternary In0.52Al0.48As-In 0.53Ga0.47As-In0.52Al0.48As double heterojunction bipolar transistor (DHBT) showing complete elimination of current blocking has been grown using solid source molecular beam epitaxy (MBE). The development of the DHBT required careful epitaxial design trade-offs which culminated in an optimum structure achieving ground breaking RF performance in excess of 100GHz and excellent DC performance for emitter dimensions of 1×5 μm2. These new DHBTs which only use ternary alloys lead to simplified device growth and fabrication options.",
author = "R. Knight and J. Sexton and M. Missous",
year = "2010",
month = dec,
day = "1",
doi = "10.1109/ASDAM.2010.5666332",
language = "English",
isbn = "9781424485758",
series = "Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010",
pages = "17--20",
booktitle = "Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010",
note = "18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 ; Conference date: 25-10-2010 Through 27-10-2010",
}