Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation

T. M G Mohiuddin, A. Lombardo, R. R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D. M. Basko, C. Galiotis, N. Marzari, K. S. Novoselov, A. K. Geim, A. C. Ferrari

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We uncover the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E2g optical mode splits in two components: one polarized along the strain and the other perpendicular. This splits the G peak into two bands, which we call G+ and G-, by analogy with the effect of curvature on the nanotube G peak. Both peaks redshift with increasing strain and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The 2D and 2 D′ bands also redshift but do not split for small strains. We study the Grüneisen parameters for the phonons responsible for the G, D, and D′ peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance © 2009 The American Physical Society.
    Original languageEnglish
    Article number205433
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume79
    Issue number20
    DOIs
    Publication statusPublished - 1 May 2009

    Keywords

    • {crystal orientation
    • graphene
    • Gruneisen coefficient
    • light polarisation
    • nanoelectronics
    • Raman spectra
    • red shift

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