Vacancy-oxygen complex in Ge crystals

V. P. Markevich; V. V. Litvinov; L. Dobaczewski; J. L. Lindström; L. I. Murin; S. V. Vetrov; I. D. Hawkins; A. R. Peaker

doi:10.1016/j.physb.2003.09.227

Vacancy-oxygen complex in Ge crystals

V. P. Markevich, V. V. Litvinov, L. Dobaczewski, J. L. Lindström, L. I. Murin, S. V. Vetrov, I. D. Hawkins, A. R. Peaker

Research output: Contribution to journal › Conference article › peer-review

Abstract

Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared absorption and deep-level transient spectroscopy (Laplace DLTS) measurements. It is argued that the VO center in Ge has three charge states: double negative (VO^--), single negative (VO ^-) and neutral (VO⁰) with the corresponding energy levels at E( - /-) = E_c-0.21eV and E(-/0) = E_v+0.27eV. Absorption lines at 716, 669 and 621 cm^-1 have been assigned to oxygen-related asymmetric stretching vibrations for the VO^--, VO ^- and VO⁰ states, respectively. Isotope analogues of these lines were identified in ¹⁸O-doped Ge samples and studies of crystals containing mixtures of ¹⁶O and ¹⁸O confirm that the complex contains only one oxygen atom. Laplace DLTS combined with uniaxial stress has been used to obtain information on the symmetry of the VO complex. It was found that the defect in VO^-- state has orthorhombic-I symmetry (point group C_2v) as for the case of the VO in Si.

Original language	English
Pages (from-to)	844-848
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
Early online date	19 Nov 2003
DOIs	https://doi.org/10.1016/j.physb.2003.09.227
Publication status	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

Keywords

Energy levels
Ge
Local vibrational modes
Symmetry
Vacancy-oxygen

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10.1016/j.physb.2003.09.227

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title = "Vacancy-oxygen complex in Ge crystals",

abstract = "Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared absorption and deep-level transient spectroscopy (Laplace DLTS) measurements. It is argued that the VO center in Ge has three charge states: double negative (VO--), single negative (VO -) and neutral (VO0) with the corresponding energy levels at E( - /-) = Ec-0.21eV and E(-/0) = Ev+0.27eV. Absorption lines at 716, 669 and 621 cm-1 have been assigned to oxygen-related asymmetric stretching vibrations for the VO--, VO - and VO0 states, respectively. Isotope analogues of these lines were identified in 18O-doped Ge samples and studies of crystals containing mixtures of 16O and 18O confirm that the complex contains only one oxygen atom. Laplace DLTS combined with uniaxial stress has been used to obtain information on the symmetry of the VO complex. It was found that the defect in VO-- state has orthorhombic-I symmetry (point group C2v) as for the case of the VO in Si.",

keywords = "Energy levels, Ge, Local vibrational modes, Symmetry, Vacancy-oxygen",

author = "Markevich, {V. P.} and Litvinov, {V. V.} and L. Dobaczewski and Lindstr{\"o}m, {J. L.} and Murin, {L. I.} and Vetrov, {S. V.} and Hawkins, {I. D.} and Peaker, {A. R.}",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.227",

language = "English",

volume = "340-342",

pages = "844--848",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier BV",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22), ICDS-22 ; Conference date: 28-07-2003 Through 01-08-2003",

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TY - JOUR

T1 - Vacancy-oxygen complex in Ge crystals

AU - Markevich, V. P.

AU - Litvinov, V. V.

AU - Dobaczewski, L.

AU - Lindström, J. L.

AU - Murin, L. I.

AU - Vetrov, S. V.

AU - Hawkins, I. D.

AU - Peaker, A. R.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared absorption and deep-level transient spectroscopy (Laplace DLTS) measurements. It is argued that the VO center in Ge has three charge states: double negative (VO--), single negative (VO -) and neutral (VO0) with the corresponding energy levels at E( - /-) = Ec-0.21eV and E(-/0) = Ev+0.27eV. Absorption lines at 716, 669 and 621 cm-1 have been assigned to oxygen-related asymmetric stretching vibrations for the VO--, VO - and VO0 states, respectively. Isotope analogues of these lines were identified in 18O-doped Ge samples and studies of crystals containing mixtures of 16O and 18O confirm that the complex contains only one oxygen atom. Laplace DLTS combined with uniaxial stress has been used to obtain information on the symmetry of the VO complex. It was found that the defect in VO-- state has orthorhombic-I symmetry (point group C2v) as for the case of the VO in Si.

AB - Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared absorption and deep-level transient spectroscopy (Laplace DLTS) measurements. It is argued that the VO center in Ge has three charge states: double negative (VO--), single negative (VO -) and neutral (VO0) with the corresponding energy levels at E( - /-) = Ec-0.21eV and E(-/0) = Ev+0.27eV. Absorption lines at 716, 669 and 621 cm-1 have been assigned to oxygen-related asymmetric stretching vibrations for the VO--, VO - and VO0 states, respectively. Isotope analogues of these lines were identified in 18O-doped Ge samples and studies of crystals containing mixtures of 16O and 18O confirm that the complex contains only one oxygen atom. Laplace DLTS combined with uniaxial stress has been used to obtain information on the symmetry of the VO complex. It was found that the defect in VO-- state has orthorhombic-I symmetry (point group C2v) as for the case of the VO in Si.

KW - Energy levels

KW - Ge

KW - Local vibrational modes

KW - Symmetry

KW - Vacancy-oxygen

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U2 - 10.1016/j.physb.2003.09.227

DO - 10.1016/j.physb.2003.09.227

M3 - Conference article

AN - SCOPUS:0347134654

SN - 0921-4526

VL - 340-342

SP - 844

EP - 848

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Vacancy-oxygen complex in Ge crystals

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