Vacancy-oxygen complex in Si1-xGex crystals

V. P. Markevich, A. R. Peaker, L. I. Murin, N. V. Abrosimov

Research output: Contribution to journalArticlepeer-review

Abstract

Electronic properties of the vacancy-oxygen complex in Si1-xGex crystals were studied using capacitance transient techniques. The enthalphy of electron ionization for the single acceptor level of the defect relative to the conduction band edge was found to increase from 0.16 to 0.19 eV with the increase in Ge content. The results indicate that the value of enthalphy of V-O ionization is very sensitive to the lattice parameter or to the Si-Si bond length, the larger these parameters the bigger the enthalphy of the ionization.

Original languageEnglish
Pages (from-to)2652-2654
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number16
DOIs
Publication statusPublished - 21 Apr 2003

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