Abstract
We have studied self-implants in Czochralski n-type silicon and compared the resulting defect states with electron irradiated material and silicon implanted with heavy ions. Using high resolution deep level transient spectroscopy, we have been able to characterize the deep energy levels of the defects produced with a resolution of more than an order of magnitude better than previously published results. We have separated and characterized the various components of the peak associated with the acceptor (-/0) charge state of the divacancy at Ec -0.43 eV. There are very clear differences in these components among the materials studied.
Original language | English |
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Pages (from-to) | 143-147 |
Number of pages | 5 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 71 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 14 Feb 2000 |
Event | The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999 |
Keywords
- Laplace deep level transient spectroscopy
- Vacancy
- Divacancy
- Silicon
- Ion implant
- Defect