Vacancy-related defects in ion implanted and electron irradiated silicon

A. R. Peaker, J. H. Evans-Freeman, P. Y.Y. Kan, I. D. Hawkins, J. Terry, C. Jeynes, L. Rubaldo

Research output: Contribution to journalConference articlepeer-review

Abstract

We have studied self-implants in Czochralski n-type silicon and compared the resulting defect states with electron irradiated material and silicon implanted with heavy ions. Using high resolution deep level transient spectroscopy, we have been able to characterize the deep energy levels of the defects produced with a resolution of more than an order of magnitude better than previously published results. We have separated and characterized the various components of the peak associated with the acceptor (-/0) charge state of the divacancy at Ec -0.43 eV. There are very clear differences in these components among the materials studied.

Original languageEnglish
Pages (from-to)143-147
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume71
Issue number1-3
DOIs
Publication statusPublished - 14 Feb 2000
EventThe European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors - Strasbourg, France
Duration: 1 Jun 19994 Jun 1999

Keywords

  • Laplace deep level transient spectroscopy
  • Vacancy
  • Divacancy
  • Silicon
  • Ion implant
  • Defect

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