Vangl2, a planar cell polarity molecule, is implicated in irreversible and reversible kidney glomerular injury

Eugenia Papakrivopoulou; E. Vasilopoulou; M. Lindenmeyer; Sabrina Pacheco; Hortensja L. Brzoska; Karen L. Price; Maria Kolatsi-Joannou; Kathryn E. White; Deborah J. Henderson; Charlotte H. Dean; Clemens D. Cohen; Alan D. Salama; Adrian S. Woolf; David A. Long

doi:10.1002/path.5158

Vangl2, a planar cell polarity molecule, is implicated in irreversible and reversible kidney glomerular injury

Eugenia Papakrivopoulou, E. Vasilopoulou, M. Lindenmeyer, Sabrina Pacheco, Hortensja L. Brzoska, Karen L. Price, Maria Kolatsi-Joannou, Kathryn E. White, Deborah J. Henderson, Charlotte H. Dean, Clemens D. Cohen, Alan D. Salama, Adrian S. Woolf, David A. Long

Division of Cell Matrix Biology & Regenerative Medicine (L5)

Research output: Contribution to journal › Article › peer-review

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Abstract

A carving, cutting, and flip-chip bonding process is proposed for the fabrication of flexible electric double layer transistors (EDLTs) with low cost. Solution processed poly(styrenesulfonic acid sodium salt) is used as a gate dielectric. The large EDL-specific capacitance ( 4.5 μF /cm 2 at 20 Hz) can induce very high charge carrier density in the InGaZnO (IGZO) channel layer, enabling the EDLTs to operate at a single-battery-drivable low voltage of 1.0 V with a high on-current of 10 −4 A. The effect of IGZO layer thickness on the performance of EDLTs was investigated. The flexible EDLT with optimized IGZO thickness of 100 nm has achieved a high on/off ratio of 1.4×107 , a low threshold voltage of 0.51 V, a saturated field-effect mobility of 1.14 cm 2 /Vs, and high positive gate bias stress stability. Furthermore, the achieved subthreshold swing, 76 mV/dec, is very close to the theoretical ideal minimum value.

Original language	English
Pages (from-to)	485-496
Journal	Journal of Pathology
Volume	246
DOIs	https://doi.org/10.1002/path.5158
Publication status	Published - 20 Nov 2018

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10.1002/path.5158

Papakrivopoulou et al J Pathol accepted 10 Aug 2018Accepted author manuscript, 1.98 MB

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Papakrivopoulou, E., Vasilopoulou, E., Lindenmeyer, M., Pacheco, S., Brzoska, H. L., Price, K. L., Kolatsi-Joannou, M., White, K. E., Henderson, D. J., Dean, C. H., Cohen, C. D., Salama, A. D., Woolf, A. S., & Long, D. A. (2018). Vangl2, a planar cell polarity molecule, is implicated in irreversible and reversible kidney glomerular injury. Journal of Pathology, 246, 485-496. https://doi.org/10.1002/path.5158

@article{481f30155e294917adf0e53f988bc813,

title = "Vangl2, a planar cell polarity molecule, is implicated in irreversible and reversible kidney glomerular injury",

abstract = "A carving, cutting, and flip-chip bonding process is proposed for the fabrication of flexible electric double layer transistors (EDLTs) with low cost. Solution processed poly(styrenesulfonic acid sodium salt) is used as a gate dielectric. The large EDL-specific capacitance ( 4.5 μF /cm 2 at 20 Hz) can induce very high charge carrier density in the InGaZnO (IGZO) channel layer, enabling the EDLTs to operate at a single-battery-drivable low voltage of 1.0 V with a high on-current of 10 −4 A. The effect of IGZO layer thickness on the performance of EDLTs was investigated. The flexible EDLT with optimized IGZO thickness of 100 nm has achieved a high on/off ratio of 1.4×107 , a low threshold voltage of 0.51 V, a saturated field-effect mobility of 1.14 cm 2 /Vs, and high positive gate bias stress stability. Furthermore, the achieved subthreshold swing, 76 mV/dec, is very close to the theoretical ideal minimum value.",

author = "Eugenia Papakrivopoulou and E. Vasilopoulou and M. Lindenmeyer and Sabrina Pacheco and Brzoska, {Hortensja L.} and Price, {Karen L.} and Maria Kolatsi-Joannou and White, {Kathryn E.} and Henderson, {Deborah J.} and Dean, {Charlotte H.} and Cohen, {Clemens D.} and Salama, {Alan D.} and Woolf, {Adrian S.} and Long, {David A.}",

year = "2018",

month = nov,

day = "20",

doi = "10.1002/path.5158",

language = "English",

volume = "246",

pages = "485--496",

journal = "Journal of Pathology",

issn = "0022-3417",

publisher = "John Wiley & Sons Ltd",

}

Papakrivopoulou, E, Vasilopoulou, E, Lindenmeyer, M, Pacheco, S, Brzoska, HL, Price, KL, Kolatsi-Joannou, M, White, KE, Henderson, DJ, Dean, CH, Cohen, CD, Salama, AD, Woolf, AS & Long, DA 2018, 'Vangl2, a planar cell polarity molecule, is implicated in irreversible and reversible kidney glomerular injury', Journal of Pathology, vol. 246, pp. 485-496. https://doi.org/10.1002/path.5158

TY - JOUR

T1 - Vangl2, a planar cell polarity molecule, is implicated in irreversible and reversible kidney glomerular injury

AU - Papakrivopoulou, Eugenia

AU - Vasilopoulou, E.

AU - Lindenmeyer, M.

AU - Pacheco, Sabrina

AU - Brzoska, Hortensja L.

AU - Price, Karen L.

AU - Kolatsi-Joannou, Maria

AU - White, Kathryn E.

AU - Henderson, Deborah J.

AU - Dean, Charlotte H.

AU - Cohen, Clemens D.

AU - Salama, Alan D.

AU - Woolf, Adrian S.

AU - Long, David A.

PY - 2018/11/20

Y1 - 2018/11/20

N2 - A carving, cutting, and flip-chip bonding process is proposed for the fabrication of flexible electric double layer transistors (EDLTs) with low cost. Solution processed poly(styrenesulfonic acid sodium salt) is used as a gate dielectric. The large EDL-specific capacitance ( 4.5 μF /cm 2 at 20 Hz) can induce very high charge carrier density in the InGaZnO (IGZO) channel layer, enabling the EDLTs to operate at a single-battery-drivable low voltage of 1.0 V with a high on-current of 10 −4 A. The effect of IGZO layer thickness on the performance of EDLTs was investigated. The flexible EDLT with optimized IGZO thickness of 100 nm has achieved a high on/off ratio of 1.4×107 , a low threshold voltage of 0.51 V, a saturated field-effect mobility of 1.14 cm 2 /Vs, and high positive gate bias stress stability. Furthermore, the achieved subthreshold swing, 76 mV/dec, is very close to the theoretical ideal minimum value.

AB - A carving, cutting, and flip-chip bonding process is proposed for the fabrication of flexible electric double layer transistors (EDLTs) with low cost. Solution processed poly(styrenesulfonic acid sodium salt) is used as a gate dielectric. The large EDL-specific capacitance ( 4.5 μF /cm 2 at 20 Hz) can induce very high charge carrier density in the InGaZnO (IGZO) channel layer, enabling the EDLTs to operate at a single-battery-drivable low voltage of 1.0 V with a high on-current of 10 −4 A. The effect of IGZO layer thickness on the performance of EDLTs was investigated. The flexible EDLT with optimized IGZO thickness of 100 nm has achieved a high on/off ratio of 1.4×107 , a low threshold voltage of 0.51 V, a saturated field-effect mobility of 1.14 cm 2 /Vs, and high positive gate bias stress stability. Furthermore, the achieved subthreshold swing, 76 mV/dec, is very close to the theoretical ideal minimum value.

U2 - 10.1002/path.5158

DO - 10.1002/path.5158

M3 - Article

SN - 0022-3417

VL - 246

SP - 485

EP - 496

JO - Journal of Pathology

JF - Journal of Pathology

ER -

Vangl2, a planar cell polarity molecule, is implicated in irreversible and reversible kidney glomerular injury

Abstract

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