Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

E. Garduño-Nolasco; M. Missous; Daniel Donoval; Jaroslav Kováč; Miroslav Mikolášek; Martin Florovič

doi:10.1117/12.2052826

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

E. Garduño-Nolasco, M. Missous, Daniel Donoval, Jaroslav Kováč, Miroslav Mikolášek, Martin Florovič

Research output: Chapter in Book/Conference proceeding › Conference contribution

Abstract

The key issue for enhancing the efficiency of semiconductor photovoltaic material devices is to reduce point defects recombination phenomena and to extend the absorption wavelength range. By inserting InAs Quantum Dots in a host GaAs semiconductor structure, new energy levels can be generated resulting in wavelength absorption enhancement. Thus, the main objective of this work was to design a material based on GaAs host semiconductor with extended absorption wavelength in the infrared region. We extend our previous characterisation of GaAs/InAs material systems by studying variable temperature photocurrent spectroscopy from 300K down to 50K in order to study the effect of different inter-dot doping profiles on cell efficiency. © 2014 Copyright SPIE.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering\|Proc SPIE Int Soc Opt Eng
Publisher	SPIE
Volume	9140
ISBN (Print)	9781628410884
DOIs	https://doi.org/10.1117/12.2052826
Publication status	Published - 2014
Event	Photonics for Solar Energy Systems V - Brussels Duration: 1 Jul 2014 → … http://spie.org/x1848.xml

Conference

Conference	Photonics for Solar Energy Systems V
City	Brussels
Period	1/07/14 → …
Internet address	http://spie.org/x1848.xml

Keywords

Gallium arsenide; Point defects; Semiconducting gallium; Semiconductor doping; Solar concentrators Absorption enhancement; Absorption wavelengths; Defects recombination; Gaas semiconductors; Photocurrent spectroscopy; Photovoltaic devices; Photovoltaic materials; Variable temperature

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1117/12.2052826

Cite this

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title = "Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices",

abstract = "The key issue for enhancing the efficiency of semiconductor photovoltaic material devices is to reduce point defects recombination phenomena and to extend the absorption wavelength range. By inserting InAs Quantum Dots in a host GaAs semiconductor structure, new energy levels can be generated resulting in wavelength absorption enhancement. Thus, the main objective of this work was to design a material based on GaAs host semiconductor with extended absorption wavelength in the infrared region. We extend our previous characterisation of GaAs/InAs material systems by studying variable temperature photocurrent spectroscopy from 300K down to 50K in order to study the effect of different inter-dot doping profiles on cell efficiency. {\textcopyright} 2014 Copyright SPIE.",

keywords = "Gallium arsenide; Point defects; Semiconducting gallium; Semiconductor doping; Solar concentrators Absorption enhancement; Absorption wavelengths; Defects recombination; Gaas semiconductors; Photocurrent spectroscopy; Photovoltaic devices; Photovoltaic materials; Variable temperature",

author = "E. Gardu{\~n}o-Nolasco and M. Missous and Daniel Donoval and Jaroslav Kov{\'a}{\v c} and Miroslav Mikol{\'a}{\v s}ek and Martin Florovi{\v c}",

note = "Code 105515; Photonics for Solar Energy Systems V ; Conference date: 01-07-2014",

year = "2014",

doi = "10.1117/12.2052826",

language = "English",

isbn = "9781628410884",

volume = "9140",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering|Proc SPIE Int Soc Opt Eng",

publisher = "SPIE",

address = "United States",

url = "http://spie.org/x1848.xml",

}

Garduño-Nolasco, E, Missous, M, Donoval, D, Kováč, J, Mikolášek, M & Florovič, M 2014, Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices. in Proceedings of SPIE - The International Society for Optical Engineering|Proc SPIE Int Soc Opt Eng. vol. 9140, SPIE, Photonics for Solar Energy Systems V, Brussels, 1/07/14. https://doi.org/10.1117/12.2052826

TY - GEN

T1 - Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

AU - Garduño-Nolasco, E.

AU - Missous, M.

AU - Donoval, Daniel

AU - Kováč, Jaroslav

AU - Mikolášek, Miroslav

AU - Florovič, Martin

N1 - Code 105515

PY - 2014

Y1 - 2014

N2 - The key issue for enhancing the efficiency of semiconductor photovoltaic material devices is to reduce point defects recombination phenomena and to extend the absorption wavelength range. By inserting InAs Quantum Dots in a host GaAs semiconductor structure, new energy levels can be generated resulting in wavelength absorption enhancement. Thus, the main objective of this work was to design a material based on GaAs host semiconductor with extended absorption wavelength in the infrared region. We extend our previous characterisation of GaAs/InAs material systems by studying variable temperature photocurrent spectroscopy from 300K down to 50K in order to study the effect of different inter-dot doping profiles on cell efficiency. © 2014 Copyright SPIE.

AB - The key issue for enhancing the efficiency of semiconductor photovoltaic material devices is to reduce point defects recombination phenomena and to extend the absorption wavelength range. By inserting InAs Quantum Dots in a host GaAs semiconductor structure, new energy levels can be generated resulting in wavelength absorption enhancement. Thus, the main objective of this work was to design a material based on GaAs host semiconductor with extended absorption wavelength in the infrared region. We extend our previous characterisation of GaAs/InAs material systems by studying variable temperature photocurrent spectroscopy from 300K down to 50K in order to study the effect of different inter-dot doping profiles on cell efficiency. © 2014 Copyright SPIE.

KW - Gallium arsenide; Point defects; Semiconducting gallium; Semiconductor doping; Solar concentrators Absorption enhancement; Absorption wavelengths; Defects recombination; Gaas semiconductors; Photocurrent spectroscopy; Photovoltaic devices; Photovoltaic ma

U2 - 10.1117/12.2052826

DO - 10.1117/12.2052826

M3 - Conference contribution

SN - 9781628410884

VL - 9140

BT - Proceedings of SPIE - The International Society for Optical Engineering|Proc SPIE Int Soc Opt Eng

PB - SPIE

T2 - Photonics for Solar Energy Systems V

Y2 - 1 July 2014

ER -

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

Abstract

Conference

Keywords

UN SDGs

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