TY - JOUR
T1 - Vertical Dielectric of Conducting Functionalized Few-Layer MoS2
AU - Kim, Joohee
AU - Lee, Seunghan
AU - Singh, Amit
AU - Park, Minwoo
AU - Bae, Hyeonhu
AU - Yang, Li
AU - Lee, Hoonkyung
PY - 2023/8/3
Y1 - 2023/8/3
N2 - In electrostatics, the electric field inside a classical conductor is zero because there are no free charges inside the conductor. Our first-principles linear response theory calculations found that conducting (metallic) one-side-hydrogenated MoS 2 with thin thickness exhibits dielectric screening behavior because it has electric polarization like a dielectric. Moreover, the screening of one-side-hydrogenated MoS 2 remained unchanged as the hydro-genated concentration varied. In contrast, metallic both-side-hydrogenated MoS 2 bilayers exhibit metallic screening behavior. We also showed that functionalized MoS 2 bilayers with −SH groups give consistent results with those of hydrogenated ones. Our results indicate that thin materials with small thicknesses can function as dielectrics, and functionalization can effectively adjust their dielectric constants in a manner similar to their distribution. This can be utilized for developing novel devices relying on dielectric screening.
AB - In electrostatics, the electric field inside a classical conductor is zero because there are no free charges inside the conductor. Our first-principles linear response theory calculations found that conducting (metallic) one-side-hydrogenated MoS 2 with thin thickness exhibits dielectric screening behavior because it has electric polarization like a dielectric. Moreover, the screening of one-side-hydrogenated MoS 2 remained unchanged as the hydro-genated concentration varied. In contrast, metallic both-side-hydrogenated MoS 2 bilayers exhibit metallic screening behavior. We also showed that functionalized MoS 2 bilayers with −SH groups give consistent results with those of hydrogenated ones. Our results indicate that thin materials with small thicknesses can function as dielectrics, and functionalization can effectively adjust their dielectric constants in a manner similar to their distribution. This can be utilized for developing novel devices relying on dielectric screening.
UR - https://doi.org/10.1021/acsanm.3c02088
U2 - 10.1021/acsanm.3c02088
DO - 10.1021/acsanm.3c02088
M3 - Article
SN - 2574-0970
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
ER -