Weak localization in graphene

Vladimir I. Fal'ko; K. Kechedzhi; E. McCann; B. L. Altshuler; H. Suzuura; T. Ando

doi:10.1016/j.ssc.2007.03.049

Weak localization in graphene

Vladimir I. Fal'ko, K. Kechedzhi, E. McCann^*, B. L. Altshuler, H. Suzuura, T. Ando

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong intervalley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.

Original language	English
Pages (from-to)	33-38
Number of pages	6
Journal	Solid State Communications
Volume	143
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2007.03.049
Publication status	Published - Jul 2007

Keywords

A. Disordered systems
D. Electronic transport
D. Quantum localization

Research Beacons, Institutes and Platforms

National Graphene Institute

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10.1016/j.ssc.2007.03.049

Cite this

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title = "Weak localization in graphene",

abstract = "We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong intervalley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.",

keywords = "A. Disordered systems, D. Electronic transport, D. Quantum localization",

author = "Fal'ko, {Vladimir I.} and K. Kechedzhi and E. McCann and Altshuler, {B. L.} and H. Suzuura and T. Ando",

year = "2007",

month = jul,

doi = "10.1016/j.ssc.2007.03.049",

language = "English",

volume = "143",

pages = "33--38",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier BV",

number = "1-2",

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TY - JOUR

T1 - Weak localization in graphene

AU - Fal'ko, Vladimir I.

AU - Kechedzhi, K.

AU - McCann, E.

AU - Altshuler, B. L.

AU - Suzuura, H.

AU - Ando, T.

PY - 2007/7

Y1 - 2007/7

N2 - We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong intervalley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.

AB - We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong intervalley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures.

KW - A. Disordered systems

KW - D. Electronic transport

KW - D. Quantum localization

UR - http://www.scopus.com/inward/record.url?scp=34249864461&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2007.03.049

DO - 10.1016/j.ssc.2007.03.049

M3 - Article

AN - SCOPUS:34249864461

SN - 0038-1098

VL - 143

SP - 33

EP - 38

JO - Solid State Communications

JF - Solid State Communications

IS - 1-2

ER -

Weak localization in graphene

Abstract

Keywords

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