Weak localization in monolayer and bilayer graphene

K. Kechedzhi, E. McCann, V. I. Fal'ko, H. Suzuura, T. Ando, B. L. Altshuler

    Research output: Contribution to journalArticlepeer-review


    We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature ofelectrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetresistance in both materials.

    Original languageEnglish
    Pages (from-to)39-54
    Number of pages16
    JournalThe European Physical Journal. Special Topics
    Issue number1
    Publication statusPublished - Sep 2007

    Research Beacons, Institutes and Platforms

    • National Graphene Institute


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