3D silicon pixel detectors are a novel technology where the electrodes penetrate the sili- con bulk perpendicularly to the wafer surface. As a consequence the collection distance is decoupled from the wafer thickness resulting in a radiation hard pixel detector by design. Between 2010 and 2012, 3D silicon pixel detectors have undergone an intensive programme of beam test experiments. As a result, 3D silicon has successfully qualified for the ATLAS upgrade project, the Insertable B-Layer (IBL), which will be installed in the long-shutdown in 2013-14. This thesis presents selected results from these beam test studies with 3D sensors bonded to both current ATLAS readout cards (FE-I3) and newly developed readout cards for the IBL (FE-I4). 3D devices were studied using 4 GeV positrons at DESY and 120 GeV pions at the SPS at CERN. Measurements presented include tracking efficiency (of the whole sensor, the pixel and the area around the electrodes), studies of the active edge pixels of SINTEF devices and cluster size distributions as a function of incident angle for IBL 3D design sensors. A simulation of 3D silicon sensors in an antiproton beam test for the AEgIS experiment, with comparison to experimental results and a previous simulation, are also presented.
|Date of Award||1 Aug 2014|
- The University of Manchester
|Supervisor||Cinzia Da Via (Supervisor)|
- 3D Silicon
- Particle Physics