Fabrication and Characterisation of Air-Sensitive InSe based Heterostructure Devices

Abstract

In this post-graphene age, there are a plethora of two-dimensional materials each with electronic properties that can be very different from traditional bulk materials. A problem however, is that a large number of these two-dimensional materials are air-sensitive, to varying extents, and degrade in ambient conditions. In this work, a methodology is established using the inert argon environment of a glovebox to fabricate and characterise various air-sensitive materials using optical and charge transport measurements. To demonstrate this, the optical properties of 2D Indium Selenide (InSe), a layered group III-IV metal chalcogenide, are characterised using methods such as angle resolved photoemission spectroscopy, photoluminescence and second order harmonic generation. This allows the band structure of InSe, calculated by density functional theorem, to be tested. The electronic transport properties of InSe are probed using InSe field-effect transistors. This sets the stage from which low-dimensional transport devices can be fabricated, using top gates to electrostatically confine InSe and create quantum dots and quantum point contacts.

Date of Award	31 Dec 2018
Original language	English
Awarding Institution	The University of Manchester
Supervisor	Andre Geim (Supervisor) & Roman Gorbachev (Supervisor)