We developed an in-situ carbon source method from chemical vapour deposition method. The traditional CVD method uses gaseous hydrocarbons as a carbon source, the process was simplified by using solid carbon source poly(methyl methacrylate)(PMMA) and polyacrylonitrile(PAN). Replacing a gaseous carbon source with a solid carbon source reduces the temperature required for the reaction, which the gaseous carbon source is over 1000 â°C and the solid carbon source is only 750 â°C. The ratio of carbon atoms to iron atoms was controlled during the experiment to find out the best ratio(C : Fe 5.4-30.6 : 1) to synthesize the graphene on a silicon wafer. The Raman data of graphene obtained on silicon wafer has an obvious 2D peak. Only a few flaws were observed on SEM data. This ratio would be used to synthesize the three-dimensional structure of graphene. In the synthesis of three-dimensional structures of graphene, the performance of graphene is not as good as the graphene obtained on silicon wafers, the strength of the three-dimensional structure of graphene is generally good. Therefore, more work is needed in the work that follows.
|Date of Award||1 Aug 2020|
- The University of Manchester
|Supervisor||Xiaogang Chen (Supervisor) & Jiashen Li (Supervisor)|