We developed an in-situ carbon source method from chemical vapour deposition method. The traditional CVD method uses gaseous hydrocarbons as a carbon source, the process was simplified by using solid carbon source poly(methyl methacrylate)(PMMA) and polyacrylonitrile(PAN). Replacing a gaseous carbon source with a solid carbon source reduces the temperature required for the reaction, which the gaseous carbon source is over 1000 â°C and the solid carbon source is only 750 â°C. The ratio of carbon atoms to iron atoms was controlled during the experiment to find out the best ratio(C : Fe 5.4-30.6 : 1) to synthesize the graphene on a silicon wafer. The Raman data of graphene obtained on silicon wafer has an obvious 2D peak. Only a few flaws were observed on SEM data. This ratio would be used to synthesize the three-dimensional structure of graphene. In the synthesis of three-dimensional structures of graphene, the performance of graphene is not as good as the graphene obtained on silicon wafers, the strength of the three-dimensional structure of graphene is generally good. Therefore, more work is needed in the work that follows.
Date of Award | 1 Aug 2020 |
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Original language | English |
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Awarding Institution | - The University of Manchester
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Supervisor | Xiaogang Chen (Supervisor) & Jiashen Li (Supervisor) |
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Growth of Three-Dimensional Graphene Scaffold from Solid Carbon Source
Li, X. (Author). 1 Aug 2020
Student thesis: Master of Philosophy